Lateral $\beta $ -Ga ₂ O ₃ MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm ² are demonstrated. Sub- $\mu \text{m}$ gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above −24 V. The combination of compensation-doped high-quality crystals, implantation-based inter-device isolation, and SiN _x -passivation yielded in consistently high average breakdown field strengths of 1.8–2.2 MV/cm for gate–drain spacings between 2 and 10 $\mu \text{m}$ . These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga ₂ O ₃ material promise—a higher breakdown strength—is well demonstrated.

Hard X-ray photoelectron spectroscopy (HAXPES) has seen continuous development since the first experiments in the 1970s. HAXPES systems are predominantly located at synchrotron sources due to low photoionization cross sections necessitating high X-ray intensities, which limits the technique’s availability to a wide range of users and potential applications. Here, a new laboratory-based instrument capable of delivering monochromated X-rays with an energy of 9.25 keV and a microfocused 30 × 45 μm² X-ray spot is introduced. The system gives an excellent energy resolution of below 500 meV coupled with good X-ray intensity. It allows stable measurements under grazing incidence conditions to maximise signal intensities. This article outlines the instrument behavior, showcases applications including bulk and multilayer measurements, and describes the overall performance of the spectrometer. This system presents an alternative to synchrotron-based experimental end stations and will help expand the number and range of HAXPES experiments performed in the future.

Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional high‐temperature thermal annealing, offering rapid manufacturing times and compatibility with temperature‐sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal‐oxide thin‐film transistors (TFTs) are presented with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or postdeposition treatment of metal oxides and their application in thin‐film electronics. The pros and cons of the different technologies are discussed in light of recent developments and prospective research in the field of modern large‐area electronics is highlighted.

An efficient way to reduce the supply voltages of organic field-effect transistors is the use of high-k inorganic materials. In order to allow high throughput during fabrication, solution-based processes for realizing inorganic dielectrics by using sol-gel procedures have become attractive in recent years. However, this procedure typically involves extended high-temperature annealing steps to achieve high-quality insulating layers which hampers fast fabrication and is incompatible to be carried out on low-temperature organic substrates. In this work, the use of a photonic curing technique is presented for the annealing of sol-gel derived hafnium oxide (HfO2) dielectrics within a few seconds. The investigations demonstrate the reduction of the leakage current density of more than 3 orders of magnitude after the photonic curing process reaching only slightly higher values as obtained with dielectric films formed from highly sophisticated atomic layer deposition. Moreover, capacitance measurements reveal a dielectric constant of 26 indicating bulk-like properties. Furthermore, organic transistors based on photonically cured HfO2 sol-gel dielectrics are fabricated and characterized operating at low voltages (<2 V), low subthreshold swing (110 mV/decade) and charge carrier mobilities of 1 cm2/Vs using a semiconducting liquid-crystal polymer

We report the rapid fabrication of high performance solution-processed In₂O₃ and heterojunction In₂O₃/ZnO based transistors via photonic processing in ambient air.