Reasonable cutting edge preparation can eliminate microscopic defects and improve the performance of a cutting tool. The flexible fiber-assisted shear thickening polishing method was used for the preparation of cemented carbide insert cutting edge. The influences of the polishing angle and polishing speed on the cutting edge preparation process were investigated, and the cutting edge radius and K-factor were employed as evaluation indexes to evaluate the edge shape. A prediction model of the cutting edge radius was also established using the mathematical regression method. The results show that the polishing angle has a more significant effect on the cutting edge radius. The cutting edge preparation efficiency is the highest under the polishing angle of 10°, and the cutting edge radius increased from the 15 ± 2 μm to 110 ± 5 μm in 5 min. The cutting edge shape can be controlled by adjusting the polishing angle, and the K-factor varies from 0.14 ± 0.03 to 0.56 ± 0.05 under the polishing angle (from −20° to 20°). The polishing speed has a less effect on the cutting edge radius and shape, but increasing the polishing speed within a certain range can improve the efficiency of cutting edge preparation. The flank face roughness decreased from the initial Ra 163.1 ± 10 nm to Ra 5.2 ± 2 nm at the polishing angle of −20°, which is the best polishing angle for the flank face surface roughness. The ANOVA method was employed to evaluate the effective weight of the polishing angle and polishing speed on preparation efficiency. The polishing angle (86.79%) has the more significant influence than polishing speed (13.21%) on the cutting edge preparation efficiency. The mathematical regression method was used to establish the model of the prediction of the cutting edge radius with polishing angle and speed, and the models were proved rationally. The results indicate that the FF-STP is an effective method for the high consistency preparation of cemented carbide insert cutting edge.

KDP crystals constitute the only laser-frequency conversion and electro-optical switches that can be used in laser systems for inertial confinement fusion. However, KDP crystals are difficult to produce because of their inherent softness, brittleness, water-solubility, and temperature sensitivity. The authors’ group developed a water-dissolution polishing method in previous studies to obtain near-damage-free KDP surfaces. In this article, the effect of the wetting characteristics of the water dissolution polishing fluid on the crystal surface—a factor rarely considered in the usual process optimization—on the polished surface quality was comprehensively studied. The mean radius of micro water droplets at 5 wt.% and 7.5 wt.% water content was approximately 0.6 nm and 1.2 nm, respectively. Theoretically, the smaller micro water droplet size is beneficial to the polished surface quality. When the water content was 5 wt.%, due to the poor wetting characteristics of the polishing fluid, surface scratches appeared on the polished surface; when the water content was 7.5 wt.%, the effects of the wetting characteristics and the radius of the micro water droplets reached a balance, and the polished surface quality was the best (Ra 1.260 nm). These results confirm that the wetting characteristics of the polishing fluid constitute one of the key factors that must be considered. This study proves that the wetting characteristics of the polishing fluid should be improved during the optimization process of polishing fluid composition when using oil-based polishing fluids for ultra-precision polishing.

A self-excited oscillating pulsed abrasive water jet polishing method is proposed to solve the problems of low removal efficiency in traditional abrasive water jet polishing and the influence of an external flow field on the material surface removal rate. The self-excited oscillating chamber of the nozzle was used to generate pulsed water jets to reduce the impact of the jet stagnation zone on material surface removal and increase the jet speed to improve processing efficiency. ANSYS Fluent was employed to simulate the processing flow field characteristics for different lengths of oscillation cavities. The simulation results indicate that the velocity of the jet shaft reached a maximum of 178.26 m/s when the length of the oscillation cavity was 4 mm. The erosion rate of the material is linear with the processing angle. A nozzle with a length of 4 mm of the self-excited oscillating cavity was fabricated for SiC surface polishing experiments. The results were compared with those of ordinary abrasive water jet polishing. The experimental results showed that the self-excited oscillation pulse fluid enhanced the erosion ability of the abrasive water jet on the SiC surface and significantly improved the material-removal depth of the abrasive water jet polishing SiC. The maximum surface erosion depth can be increased by 26 μm.

The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates. The authors proposed a novel sapphire substrate polishing method that is based on the dielectrophoresis (DEP) effect. The principle of dielectrophoresis polishing (DEPP) is described. A non-uniform electric field was added in the polishing area to drive abrasives moving in the direction towards the plate by the DEP force. The amount of abrasives that participates in the polishing action increases as the distribution of polishing slurry on sapphire surface changes, leading towards the improvement of sapphire polishing both in quality and efficiency. Comparative experiments between DEPP and traditional chemical mechanical polishing (CMP) were carried out. It was found that the maximum increase of sapphire MRR for DEPP is 71%, reaching 13 mg/h, and the minimum increase was 9.5%, reaching 4.6 mg/h. The surface roughness of the sapphire substrate decreases faster and more uniform with DEPP. The final surface roughness of the sapphire substrate after DEPP was R_a 0.87 nm and the flatness was 0.3078 waves (RMS value), which is better than 0.6863 waves (RMS value) of sapphire substrate with traditional CMP polishing.

Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.