In this paper, a $(u+1)\times v$ horn torus resistor network with a special boundary is researched. According to Kirchhoff's law and the recursion-transform method, a model of the resistor network is established by the voltage $V$ and a perturbed tridiagonal Toeplitz matrix. We obtain the exact potential formula of a horn torus resistor network. First, the orthogonal matrix transformation is constructed to obtain the eigenvalues and eigenvectors of this perturbed tridiagonal Toeplitz matrix; second, the solution of the node voltage is given by using the famous fifth kind of discrete sine transform (DST-V). We introduce Chebyshev polynomials to represent the exact potential formula. In addition, the equivalent resistance formulae in special cases are given and displayed by a three-dimensional dynamic view. Finally, a fast algorithm of computing potential is proposed by using the mathematical model, famous DST-V, and fast matrix-vector multiplication. The exact potential formula and the proposed fast algorithm realize large-scale fast and efficient operation for a $(u+1)\times v$ horn torus resistor network, respectively.

In this paper, tridiagonal Toeplitz matrix (type I, type II) with opposite-bordered rows are introduced. Main attention is paid to calculate the determinants, the inverses and the eigenpairs of these matrices. Specifically, the determinants of an $n\times n$ tridiagonal Toeplitz matrix with opposite-bordered rows can be explicitly expressed by using the $(n-1)$th Fibonacci number, the inversion of the tridiagonal Toeplitz matrix with opposite-bordered rows can also be explicitly expressed by using the Fibonacci numbers and unknown entries from the new matrix. Besides, we give the expression of eigenvalues and eigenvectors of the tridiagonal Toeplitz matrix with opposite-bordered rows. In addition, some algorithms are presented based on these theoretical results. Numerical results show that the new algorithms have much better computing efficiency than some existing algorithms studied recently.

The establishment of a resistor network model has become a sharp edge to solve complex scientific problems. In this paper, we introduce Chebyshev polynomials to express the potential formula of the hammock resistor network and improve the general solution of the hammock resistor network. Moreover, through the change in different parameters, special potential formulas are proposed and displayed in 3D dynamic view. A fast algorithm of the calculating potential is given by using the matrix equation model, discrete cosine transform-II, and the fast matrix-vector multiplication. Finally, we show the advantages of our improved potential formula and fast algorithm by the calculation efficiency of the three methods. The modified potential formula and the presented fast algorithm provide a new tool for the field of science and engineering.