WTe ₂ , a layered crystalline material, displays both ferroelectricity and metallicity.

Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to “domain wall nanoelectronics,” a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (~10³) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices.

Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals (vdW) ferroelectrics have stable layered structures with a combination of strong intralayer and weak interlayer forces. These special atomic arrangements, in combination with the ferroelectric order, give rise to fundamentally new phenomena and functionalities, including downscaling limits, origin of the polarization and switching mechanisms. Furthermore, their easily stackable nature means that vdW ferroelectrics are readily integrable with highly dissimilar materials, such as industrial silicon substrates, without interfacial issues, and are thus regarded as attractive building blocks for post-Moore’s law electronics. In this Review, we consider the experimentally verified vdW ferroelectric systems by discussing their unique characteristics, such as quadruple-well potentials, metallic ferroelectricity and dipole-locking effects. We highlight the emerging field of engineered vdW ferroelectricity, created by artificially breaking centrosymmetry in stacks of otherwise nonpolar parent materials. Additionally, innovative device applications harnessing vdW ferroelectricity are showcased, including transistors able to beat the Boltzmann tyranny, nonvolatile memories and optoelectronic and flexible devices. Recent progress and existing challenges provide a perspective on future research directions and applications.