ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

We illustrated that the elongated and shortened Cu–O bonds are responsible for the distinctly improved J _c of the YBCO film under both self-field and applied magnetic fields.

Indium tin oxide (ITO) films were deposited on soda-lime glass substrates by the spray pyrolysis method using a spray solution of InCl₃·3H₂O as a precursor, SnCl₄·5H₂O as a dopant and acetylacetone (AcAcH) as a chelating agent. The effect of the addition of AcAcH to the spray solution on the surface morphology of the ITO film was investigated. The surface quality of the film prepared from the spray solution with AcAcH was better than that without AcAcH. The ITO film with the thickness of 230 nm, using the spray solution with AcAcH, exhibited the lowest resistivity of 4.75 × 10⁻⁴ Ω·cm and higher optical transmittance of 85 %, respectively.

A La_0.67Sr_0.33MnO₃ (LSMO) ferromagnetic layer and a Nd³⁺/Hf⁴⁺ co-substituted Bi₄Ti₃O₁₂ (Bi_3.15Nd_0.85Ti_3-xHf_xO₁₂ (BNTH_x, x = 0, 0.025, 0.05, 0.1 and 0.15)) ferroelectric layer were successively deposited onto the (00 l)-oriented LaNiO₃ (LNO) layer buffered (001) Si substrate via all chemical solution deposition (CSD) method. As a result, the BNTH_x/LSMO ferromagnetic-ferroelectric composite films integrated on Si substrate exhibit high c-axis orientation. The Nd³⁺/Hf⁴⁺ co-substituted BNTH_x films have the lower leakage current and the better ferroelectric properties than the mono-substituted Bi₄Ti₃O₁₂ (Bi_3.15Nd_0.85Ti₃O₁₂ and Bi₄Ti_2.95Hf_0.05O₁₂) films. In particular, the BNTH_0.05/LSMO/LNO film has the lowest leakage current density of 2.5 × 10⁻⁷ A/cm² at 200 kV/cm, and the highest remnant polarization (Pr) of 27.3 μC/cm². The BNTH_0.05/LSMO/LNO composite film also exhibits the soft ferromagnetism characteristics with a high saturated magnetization of 258 emu/cm³ at 300 K, and the excellent magnetoelectric (ME) effect. The variations of ME voltage coefficient α_E values with DC bias magnetic field H_bias shows that the BNTH_0.05/LSMO/LNO film has the high α_E value at near zero H_bias. Moreover, at H_bias = 0 Oe, the α_E value gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches about 18.9 V/cm·Oe at 100 kHz, suggesting the existence of self-biased ME effect.