Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes

Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer

Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO