Perovskite photovoltaic materials (PPMs) have emerged as one of superstar object for applications in photovoltaics due to their excellent properties—such as band-gap tunability, high carrier mobility, high optical gain, astrong nonlinear response—as well as simplicity of their integration with other types of optical and electronic structures. Meanwhile, PPMS and their constructed devices still present many challenges, such as stability, repeatability, and large area fabrication methods and so on. The key issue is: how can PPMs be prepared using an effective way which most of the readers care about. Chemical vapor deposition (CVD) technology with high efficiency, controllability, and repeatability has been regarded as a cost-effective road for fabricating high quality perovskites. This paper provides an overview of the recent progress in the synthesis and application of various PPMs via the CVD method. We mainly summarize the influence of different CVD technologies and important experimental parameters (temperature, pressure, growth environment, etc.) on the stabilization, structural design, and performance optimization of PPMS and devices. Furthermore, current challenges in the synthesis and application of PPMS using the CVD method are highlighted with suggested areas for future research.

Low-dimensional all-inorganic metal halide perovskite (AIMHP) materials, as a new class of nanomaterials, hold great promise for various optoelectronic devices. In the past few years, tremendous progress has been achieved in the development of efficient and stable AIMHP nanomaterials for optical property studies and related applications. Here, we offer a critical overview on the unique merits and the state-of-the-art design of AIMHP using different composition strategies. Then, the effects of material compositions, dimensionality, morphologies and structures on optical properties are summarized. We also comprehensively present recent advances in the development AIMHP nanomaterials for practical applications including solar cells, light-emitting diodes, lasers and photodetectors. Lastly, the critical challenges and future opportunities in this emerging field are highlighted.

A protective scheme of quantum dense coding and quantum teleportation of the X-type initial state is proposed in amplitude damping noisy channel with memory using weak measurement and measurement reversal. Compared with the noisy channel without memory, the memory factor improves both the capacity of quantum dense coding and the fidelity of the quantum teleportation to a certain extent for the given damping coefficient. Although the memory factor can inhibit decoherence in some degree, it cannot eliminate it completely. In order to further overcome the influence of the damping coefficient, the weak measurement protective scheme is proposed, which found that the capacity and the fidelity can be efficiently improved by adjusting weak measurement parameter. Another practical conclusion is that, among the three initial states, the weak measurement protective scheme has the best protective effect on the Bell-state in terms of the capacity and the fidelity. For the channel with no memory and full memory, the channel capacity of quantum dense coding reaches two and the fidelity of quantum teleportation reaches one for the bit system; the Bell system can recover the initial state completely with a certain probability. It can be seen that the entanglement of the system can be well protected by the weak measurement scheme, which provides a good support for the realization of quantum communication.

With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.