The ever-growing prominence and widespread acceptance of organic light-emitting diodes (OLEDs), particularly those employing thermally activated delayed fluorescence (TADF), have firmly established them as formidable contenders in the field of lighting technology. TADF enables achieving a 100% utilization rate and efficient luminescence through reverse intersystem crossing (RISC). However, the effectiveness of TADF-OLEDs is influenced by their high current density and limited device lifetime, which result in a significant reduction in efficiency. This comprehensive review introduces the TADF mechanism and provides a detailed overview of recent advancements in the development of host-free white OLEDs (WOLEDs) utilizing TADF. This review specifically scrutinizes advancements from three distinct perspectives: TADF fluorescence, TADF phosphorescence and all-TADF materials in host-free WOLEDs. By presenting the latest research findings, this review contributes to the understanding of the current state of host-free WOLEDs, employing TADF and underscoring promising avenues for future investigations. It aims to serve as a valuable resource for newcomers seeking an entry point into the field as well as for established members of the WOLEDs community, offering them insightful perspectives on imminent advancements.

The surface morphology of perovskite films significantly influences the performance of perovskite light-emitting diodes (PeLEDs). However, the thin perovskite thickness (~10 nm) results in low surface coverage on the substrate, limiting the improvement of photoelectric performance. Here, we propose a molecular additive strategy that employs pentafluorophenyl diphenylphosphinate (FDPP) molecules as additives. P=O and Pentafluorophenyl (5F) on FDPP can coordinate with Pb²⁺ to slow the crystallization process of perovskite and enhance surface coverage. Moreover, FDPP reduces the defect density of perovskite and enhances the crystalline quality. The maximum brightness, power efficiency (PE), and external quantum efficiency (EQE) of the optimal device reached 24,230 cd m⁻², 82.73 lm W⁻¹, and 21.06%, respectively. The device maintains an EQE of 19.79% at 1000 cd m⁻² and the stability is further enhanced. This study further extends the applicability of P=O-based additives.