Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with ∼4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 μs monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, Pr = 140 μC/cm2 and a coercive field, Ec = 6.5 MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of 75 μC/cm2 for Al0.68Sc0.32N and 25μC/cm2 for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31,f) of -1.3 C/m2 (down-switching) and -0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and -0.9 C/m2 (down-switching) and -0.7 C/m2 (up-switching) for Al0.64Sc0.36N.