Prof. Yung-Fu Chen
Department of Electrophysics, National Chiao Tung University Taiwan, Hsin-chu 30010, Taiwan
'%3e%3cpath%20d='M22.1642%2019.0924C21.7317%2018.068%2021.1041%2017.1375%2020.3163%2016.3527C19.5309%2015.5656%2018.6006%2014.9381%2017.5766%2014.5048C17.5674%2014.5002%2017.5582%2014.4979%2017.5491%2014.4933C18.9774%2013.4616%2019.9059%2011.7811%2019.9059%209.88504C19.9059%206.74408%2017.3611%204.19922%2014.2201%204.19922C11.0792%204.19922%208.53429%206.74408%208.53429%209.88504C8.53429%2011.7811%209.46282%2013.4616%2010.8912%2014.4956C10.882%2014.5002%2010.8728%2014.5025%2010.8636%2014.5071C9.83652%2014.9404%208.91487%2015.5617%208.1239%2016.355C7.33685%2017.1404%206.70933%2018.0707%206.276%2019.0947C5.85031%2020.0972%205.62072%2021.172%205.59967%2022.2609C5.59905%2022.2853%205.60335%2022.3097%205.61229%2022.3325C5.62123%2022.3553%205.63465%2022.376%205.65174%2022.3935C5.66883%2022.4111%205.68926%2022.425%205.71182%2022.4345C5.73437%2022.444%205.7586%2022.4489%205.78308%2022.4489H7.15868C7.25956%2022.4489%207.3398%2022.3686%207.3421%2022.2701C7.38795%2020.5001%208.09868%2018.8425%209.35506%2017.5861C10.655%2016.2862%2012.3814%2015.5709%2014.2201%2015.5709C16.0588%2015.5709%2017.7852%2016.2862%2019.0852%2017.5861C20.3415%2018.8425%2021.0523%2020.5001%2021.0981%2022.2701C21.1004%2022.3709%2021.1807%2022.4489%2021.2815%2022.4489H22.6571C22.6816%2022.4489%2022.7058%2022.444%2022.7284%2022.4345C22.751%2022.425%2022.7714%2022.4111%2022.7885%2022.3935C22.8056%2022.376%2022.819%2022.3553%2022.8279%2022.3325C22.8369%2022.3097%2022.8412%2022.2853%2022.8406%2022.2609C22.8176%2021.165%2022.5907%2020.0989%2022.1642%2019.0924ZM14.2201%2013.8284C13.1678%2013.8284%2012.1773%2013.418%2011.4322%2012.6729C10.6871%2011.9278%2010.2767%2010.9374%2010.2767%209.88504C10.2767%208.83271%2010.6871%207.84227%2011.4322%207.09715C12.1773%206.35204%2013.1678%205.94165%2014.2201%205.94165C15.2724%205.94165%2016.2629%206.35204%2017.008%207.09715C17.7531%207.84227%2018.1635%208.83271%2018.1635%209.88504C18.1635%2010.9374%2017.7531%2011.9278%2017.008%2012.6729C16.2629%2013.418%2015.2724%2013.8284%2014.2201%2013.8284Z'%20fill='%238590A2'/%3e%3c/g%3e%3c/svg%3e)
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Academic Career Length
28Years (1999-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications13 August 2004 in Optics Letters
Journal Article
Yung-Fu ChenEfficient self-Raman frequency conversion from a diode-pumped actively -switched laser at 1064 nm to Stokes emission at 1176 nm is achieved for the first time to the author’s knowledge. With a 0.2-at. % crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to a conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively.
15 November 2004 in Optics Letters
Journal Article
Yung-Fu ChenAn efficient compact diode-pumped actively -switched laser at 1521 nm is demonstrated by use of the nonlinear optical process of stimulated Raman scattering. With a 13.6-W diode pump power, greater than 1.18 W of 1521-nm average power at a repetition rate of 20 kHz is generated. At a repetition rate of 5 kHz, the pulse width is shorter than 5 ns and the peak power is higher than 20 kW.
15 March 2002 in Optics Letters
Journal Article
Yung-Fu ChenSTS. W. Tsai
S. W. Tsai
A compact high-power yellow pulsed laser has been demonstrated by use of intracavity sum-frequency mixing in a diode-end-pumped -switched dual-wavelength laser. A three-mirror configuration forming two separate laser cavities is used to optimize the gain match for simultaneous dual-wavelength emission in -switched operation. Under the optimum cavity-length condition, the highest yellow average power is 340 mW and the peak power is 2 kW, obtained at 12.5 W of pump power.
22 February 2012 in Optics Express
Journal Article
A comparison between the fluorescence spectra of the Nd-doped vanadate crystals (Nd:YVO4, Nd:GdVO4, Nd:LuVO4) for the 4F3/2 → 4I11/2 transition is studied. We numerically analyze the condition of gain-to-loss balance via an uncoated intracavity etalon to achieve the dual-wavelength operation. We further experimentally demonstrate the orthogonally polarized dual-wavelength laser with a single Nd:LuVO4 crystal. The simultaneous dual-wavelength Nd:LuVO4 laser at 1085.7 nm in σ polarization and 1088.5 nm in π polarization is realized. At an incident pump power of 12 W, the average output power obtained at 1085.7 nm and 1088.5 nm is 0.4 W and 1.7 W, respectively.
15 September 2004 in Optics Letters
Journal Article
Yung-Fu ChenAn efficient compact eye-safe laser at 1525 nm is presented by use of self-frequency Raman conversion in a diode-pumped actively -switched 1342-nm laser. At an incident pump power of 13.5 W, the self-stimulated Raman laser produces 1.2 W of 1525-nm average output power at a repetition rate of 20 kHz. The corresponding peak power at 1525 nm is generally greater than 10 kW for repetition rates from 5 to 20 kHz.
About Me
Prof. Dr. Yung-Fu Chen received his B.S. and Ph.D in Electronics Engineering from National Chiao Tung University, Hsinichu, Taiwan, in 1990 and 1994, respectively. In 1994, he worked at the Precision Instrument Development Center, National Science Council, Taiwan, where his research mainly concerned the development of diode-pumped solid-state lasers as well as quantitative analysis in surface electron spectroscopy. In 1999, he was an Associate Professor at the Department of Electrophysics, National Chiao Tung University (NCTU). In 2001, he was promoted to Professor of NCTU. He was an Executive Dean at the College of Science, NCTU, between 2006 and 2007. He also served as Chair of the Department of Electrophysics between 2011 and 2013. Since 2011, he has been a Distinguished Professor. He is currently a Dean at the College of Science, NCTU. His main research includes laser physics, solid-state lasers, Q-switched lasers, mode-locked lasers, and transverse pattern formation in microchip lasers. He is a member of the Optical Society of America and the IEEE Photonics Society. He is currently an Associate Editor for the journals "Optics Express" and "Applied Physics B". He was the recipient of several outstanding awards, such as a Sun-Yet-Sen Academic Award for excellent papers in 2008, Outstanding Research Awards from the National Science Council in 2004 and 2011, and an Outstanding Honorary Award from the Ho C.T. Education Foundation in 2011.