As semiconductor technology keeps moving forward, undeterred by the many challenges ahead, one specific deliverable is capturing the attention of many experts in the field: line width roughness (LWR) specifications are expected to be <2 nm in the near term, and to drop below 1 nm in just a few years. This is a daunting challenge and engineers throughout the industry are trying to meet these targets using every means at their disposal. However, although current efforts are surely admirable, we believe they are not enough. The fact is that a specification has a meaning only if there is an agreed methodology to verify if the criterion is met or not. Such standardization is critical in any field of science and technology and the question that we need to ask ourselves today is whether we have a standardized LWR metrology or not. In other words, if a single reference sample were provided, would everyone measuring it get reasonably comparable results? We came to realize that this is not the case and that the observed spread in the results throughout the industry is quite large. In our opinion, this makes the comparison of LWR data among institutions, or to a specification, very difficult. We report the spread of measured LWR data across the semiconductor industry. We investigate the impact of image acquisition, measurement algorithm, and frequency analysis parameters on LWR metrology. We review critically some of the International Technology Roadmap for Semiconductors (ITRS) metrology guidelines [such as measurement box length <2 μm and the need to correct for scanning electron microscope (SEM) noise]. We compare the SEM roughness results to AFM measurements. Finally, we propose a standardized LWR measurement protocol—the imec roughness protocol—intended to ensure that every time LWR measurements are compared (from various sources or to specifications), the comparison is sensible and sound. We deeply believe that the industry is at a point where it is imperative to guarantee that when talking about a critical parameter such as LWR, everyone speaks the same language, which is not currently the case.

An effective pathway to enhance the heat transfer process is to induce the formation of highly mobile condensate droplets, employing micro‐nanoengineered superhydrophobic surfaces. However, the design of the topography of these surfaces for sustained high performance constitutes a significant scientific and technological challenge. Herein, the critical role of the correlation length of topography is demonstrated as an important factor when designing superhydrophobic surfaces for heat transfer applications. Specifically, it is shown that a) a high correlation length value corresponds to increased space between surface structures and higher lateral distances between nucleating droplets, which results in lower droplet departure diameter and significantly delayed flooding of the surface and b) correlation length has to surpass a critical value for dropwise condensation (DWC) to be sustained in hierarchical structured surfaces, when the droplets are growing in a partial Cassie state. Following this rationale, droplets are categorized in three different energy and wetting states (Wenzel droplets, Cassie droplets of low kinetic energy and high energy jumping droplets), depending on the correlation length of the topography. Heat transfer experiments demonstrate an increase of 126% in the heat transfer coefficient (HTC) of surfaces exhibiting the maximum correlation length when compared to the flat hydrophobic surface.

Surface roughness and nano-morphology in SF(6) plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.

We focus on the problem of obtaining and characterizing the edge roughness of photoresist lines by analyzing top-down scanning electron microscope (SEM) images. An off-line image analysis algorithm detecting the line edge, and an edge roughness characterization scheme, based on scaling analysis, are briefly described. As a result, it is suggested that apart from the rms value of the edge (sigma), two more roughness parameters are needed: the roughness exponent α and the correlation length ξ. These characterize the spatial complexity of the edge and determine the dependence of sigma on the length of the measured edge. Completing our previous work on the dependencies of the roughness parameters (sigma,α,ξ) on various image analysis options, we examine the effect of the type of noise smoothing filter. Then, a comparative study of the roughness parameters of the left and right edges of resist lines is conducted, revealing that the sigma values of the right edges are larger than those of the left edges (due to an imperfect SEM beam alignment), whereas the roughness exponents and the correlation lengths do not show such a trend. Finally, the relation between line width roughness and line edge roughness is thoroughly investigated with interesting conclusions. © 2004 Society of Photo-Optical Instrumentation Engineers.

The dissociation dynamics of a dichromatically laser-driven diatomic Morse molecule vibrating in the ground state is investigated by applying tools of the nonlinear theory of classical Hamiltonian systems. Emphasis is placed on the role of the relative phase of the two fields, φ. First, it is found that, just like in quantum mechanics, there is dependence of the dissociation probability on φ. Then, it is demonstrated that addition of the second laser leads to suppression of probability (stabilization), when the intensity of the first laser is kept constant just above or below the single laser dissociation threshold. This “chemical bond hardening” diminishes as φ increases. These effects are investigated and interpreted in terms of modifications in phase space topology. Variations of φ as well as of the intensity of the second laser may cause (i) appearance/disappearance of the stability island corresponding to the common resonance with the lowest energy and (ii) deformation and movement of the region of Kolmogorov–Arnold–Moser tori that survive from the undriven system. The latter is the main origin in phase space of stabilization and φ dependence. Finally, it is shown that the use of short laser pulses enhances both effects.