In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors.

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an $80\mathrm{nm}$ MOSFET, excellent agreement to the experimental data is obtained.

Comparative benchmarking of a graphene nanoribbon field‐effect transistor (GNRFET) and a nanoscale metal‐oxide‐semiconductor field‐effect transistor (nano‐MOSFET) for applications in ultralarge‐scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit‐level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon‐based electronics. Budding GNRFET, using the circuit‐level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy‐delay product (EDP) and power‐delay product (PDP) of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current‐voltage (I_d‐V_dandI_d‐V_g), for subthreshold swing (SS), drain‐induced barrier lowering (DIBL), and current on/off ratio for circuit implementation is given. GNRFET can overcome the short‐channel effects that are prevalent in sub‐100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (I on/I off), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

The carriers in a carbon nanotube (CNT), like in any quasi‐1‐dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum‐confined leading to a digital (quantized) energy spectrum. We report the salient features of the mobility and saturation velocity controlling the charge transport in a semiconducting single‐walled CNT (SWCNT) channel. The ultimate drift velocity in SWCNT due to the high‐electric‐field streaming is based on the asymmetrical distribution function that converts randomness in zero‐field to a stream‐lined one in a very high electric field. Specifically, we show that a higher mobility in an SWCNT does not necessarily lead to a higher saturation velocity that is limited by the mean intrinsic velocity depending upon the band parameters. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. However, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration. The velocity that saturates in a high electric field can be lower than the intrinsic velocity due to onset of a quantum emission. In an SWCNT, the mobility may also become ballistic if the length of the channel is comparable or less than the mean free path.

Morphology effect is one of the essential factors that influence the performance of electrochemical biosensors based on ZnO nanostructures. These nanostructures are characterized by anisotropic growth with different dimensionalities such as zero-dimensional, one-dimensional, and two-dimensional. More interestingly, when combining each dimension into another advanced dimensionality, i.e. the three-dimensional (3-D), exceptional properties can be generated that are not otherwise found in low dimensionalities. The outstanding popularity of 3-D ZnO stems from many factors, with one of the most important being its synergic advantages from its low dimensional sub-unit and the additional surface area of the 3-D structure due to an increased geometric volume. This review briefly describes the principles and growth mechanism factors of 3-D ZnO via solution-based approaches and additional advanced methods. The paper further expands on the latest advancement of research into the 3-D ZnO nanostructure-based electrochemical biosensors to detect biomolecules that harm humankind. We also discussed the analytical performance of these biosensors using different nanocomposite materials. Additionally, limitations and suggestions on particular sensing works are proposed. Lastly, the five-year progress in research into 3-D ZnO-based electrochemical biosensors’ performance in healthcare diagnosis is compared and future challenges presented.