The field of microelectromechanical Systems (MEMS) for photonic integrated circuits (PICs) is reviewed. This field leverages mechanics at the nanometer to micrometer scale to improve existing components and introduce novel functionalities in PICs. This review covers the MEMS actuation principles and the mechanical tuning mechanisms for integrated photonics. The state of the art of MEMS tunable components in PICs is quantitatively reviewed and critically assessed with respect to suitability for large-scale integration in existing PIC technology platforms. MEMS provide a powerful approach to overcome current limitations in PIC technologies and to enable a new design dimension with a wide range of applications.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces. However, silicon’s relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption, which are substantial impediments for very large-scale integration in silicon photonics. Microelectromechanical systems (MEMS) technology can enhance silicon photonics with building blocks that are compact, low-loss, broadband, fast and require very low power consumption. Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, with wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fibre-array attachment for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements, including power couplers, phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications, neuromorphic computing, sensing, programmable photonics, and quantum computing.

Programmable photonic integrated circuits are emerging as an attractive platform for applications such as quantum information processing and artificial neural networks. However, current programmable circuits are limited in scalability by the lack of low-power and low-loss phase shifters in commercial foundries. Here, we demonstrate a compact phase shifter with low-power photonic microelectromechanical system (MEMS) actuation on a silicon photonics foundry platform (IMEC’s iSiPP50G). The device attains ( 2.9 π ± π ) phase shift at 1550 nm, with an insertion loss of ( 0.33 − 0.10 + 0.15 ) d B , a V π of ( 10.7 − 1.4 + 2.2 ) V , and an L π of ( 17.2 − 4.3 + 8.8 ) µ m . We also measured an actuation bandwidth f − 3 d B of 1.03 MHz in air. We believe that our demonstration of a low-loss and low-power photonic MEMS phase shifter implemented in silicon photonics foundry compatible technology lifts a main roadblock toward the scale-up of programmable photonic integrated circuits.

Photonic integrated circuits have seen a dramatic increase in complexity over the past decades. This development has been spurred by recent applications in datacenter communications and enabled by the availability of standardized mature technology platforms. Mechanical movement of wave-guiding structures at the micro- and nanoscale provides unique opportunities to further enhance functionality and to reduce power consumption in photonic integrated circuits. We here demonstrate integration of MEMS-enabled components in a simplified silicon photonics process based on IMEC's Standard iSiPP50G Silicon Photonics Platform and a custom release process.

The emerging fields of silicon (Si) photonic micro–electromechanical systems (MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, and optomechanical resonators. In contrast to conventional SiO 2 -clad Si photonics, photonic MEMS and optomechanics have suspended and movable parts that need to be protected from environmental influence and contamination during operation. Wafer-level hermetic sealing can be a cost-efficient solution, but Si photonic MEMS that are hermetically sealed inside cavities with optical and electrical feedthroughs have not been demonstrated to date, to our knowledge. Here, we demonstrate wafer-level vacuum sealing of Si photonic MEMS inside cavities with ultra-thin caps featuring optical and electrical feedthroughs that connect the photonic MEMS on the inside to optical grating couplers and electrical bond pads on the outside. We used Si photonic MEMS devices built on foundry wafers from the iSiPP50G Si photonics platform of IMEC, Belgium. Vacuum confinement inside the sealed cavities was confirmed by an observed increase of the cutoff frequency of the electro-mechanical response of the encapsulated photonic MEMS phase shifters, due to reduction of air damping. The sealing caps are extremely thin, have a small footprint, and are compatible with subsequent flip-chip bonding onto interposers or printed circuit boards. Thus, our approach for sealing of integrated Si photonic MEMS clears a significant hurdle for their application in high-performance Si photonic circuits.

We present a design for an analog phase shifter based on Silicon Photonic MEMS technology. The operation principle is based on a two-step parallel plate electrostatic actuation mechanism to bring a vertically movable suspended tapered waveguide in a first step into proximity of the bus waveguide and to tune the phase of the propagating coupled mode in a second step by actuation of the suspended waveguide to tune the vertical gap. In the coupled state, the effective index of the optical supermode and the total accumulated phase delay can be varied by changing the vertical separation between the adiabatically tapered suspended and the fixed bus waveguides. Simulations predict that π phase shift can be achieved with an actuation voltage of 19 V, corresponding to a displacement of 19 nm. With an adiabatic coupler geometry, the optical signal can be coupled between the moving waveguide and the bus waveguide with low loss in a wide wavelength range from 1.5 μm to 1.6 μm keeping the average insertion loss below 0.3 dB.