Structural phase stability, electronic structure, optical properties, and high-pressure behavior of polytypes of ${\mathrm{In}}_2{\mathrm{O}}_3$ in three space group symmetries $I{2}_{1}3$, $Ia\overline{3}$, and $R\overline{3}$ are studied by first-principles density-functional calculations. From structural optimization based on total energy calculations, lattice and positional parameters have been established, which are found to be in good agreement with the corresponding experimental data except for $I{2}_{1}3$, where the symmetry analysis for optimized structure indicates that it arrived at the $Ia\overline{3}$ phase. ${\mathrm{In}}_2{\mathrm{O}}_3$ of space group symmetry $Ia\overline{3}$ is found to undergo a pressure-induced phase transition to the $R\overline{3}$ phase at pressures around $3.8\mathrm{GPa}$. From the analysis of band structure coming out from the calculations within the local density and generalized gradient approximations, it is found that ${\mathrm{In}}_2{\mathrm{O}}_3$ of space group symmetry $I{2}_{1}3$ and $R\overline{3}$ are indirect band gap semiconductors, while the other phase of space group $Ia\overline{3}$ is having direct band gap. The calculated carrier effective masses for all these three phases are compared with available experimental and theoretical values. From charge-density and electron localization function analysis, it is found that these phases have dominant ionic bonding with noticeable covalent interaction between indium and oxygen. The magnitudes of the absorption and reflection coefficients for ${\mathrm{In}}_2{\mathrm{O}}_3$ with space groups $Ia\overline{3}$ and $R\overline{3}$ are small in the energy range $0–5\mathrm{eV}$, indicating that these phases can be regarded and classified as transparent.

Enhanced diffusion of ion implanted boron in silicon during the first few seconds (transient) of rapid thermal annealing (RTA) has previously tentatively been attributed to either interstitial boron diffusion or damage enhanced diffusion. We have performed various anneal sequences of 11B implanted Si combined with post-implantation of 10B and measured the boron concentration profiles with secondary ion mass spectroscopy. The data show that the enhanced diffusion found in the tail of the profiles after RTA is not caused by fast diffusion of boron ending up at interstitial sites after the slowing down during implantation. Rather the enhanced diffusion in the tail is associated with the implantation damage annealing.

Successful growth of lattice‐matched Sc_1−xEr_xAs layers buried in GaAs with a room‐temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice‐matched rare‐earth monopnictides and monochalcogenides in semiconductors. Reflection high‐energy electron diffraction oscillations during ScAs, ErAs, and Sc_1−xEr_xAs growth indicate monolayer‐by‐monolayer growth.