This meta-analysis examines the comparative diagnostic performance of polymerase chain reaction (PCR) for the diagnosis of Pneumocystis pneumonia (PCP) on different respiratory tract samples, in both human immunodeficiency virus (HIV) and non-HIV populations. A total of 55 articles met inclusion criteria, including 11 434 PCR assays on respiratory specimens from 7835 patients at risk of PCP. QUADAS-2 tool indicated low risk of bias across all studies. Using a bivariate and random-effects meta-regression analysis, the diagnostic performance of PCR against the European Organisation for Research and Treatment of Cancer–Mycoses Study Group definition of proven PCP was examined. Quantitative PCR (qPCR) on bronchoalveolar lavage fluid provided the highest pooled sensitivity of 98.7% (95% confidence interval [CI], 96.8%–99.5%), adequate specificity of 89.3% (95% CI, 84.4%–92.7%), negative likelihood ratio (LR⁻) of 0.014, and positive likelihood ratio (LR⁺) of 9.19. qPCR on induced sputum provided similarly high sensitivity of 99.0% (95% CI, 94.4%–99.3%) but a reduced specificity of 81.5% (95% CI, 72.1%–88.3%), LR⁻ of 0.024, and LR⁺ of 5.30. qPCR on upper respiratory tract samples provided lower sensitivity of 89.2% (95% CI, 71.0%–96.5%), high specificity of 90.5% (95% CI, 80.9%–95.5%), LR⁻ of 0.120, and LR⁺ of 9.34. There was no significant difference in sensitivity and specificity of PCR according to HIV status of patients. On deeper respiratory tract specimens, PCR negativity can be used to confidently exclude PCP, but PCR positivity will likely require clinical interpretation to distinguish between colonization and active infection, partially dependent on the strength of the PCR signal (indicative of fungal burden), the specimen type, and patient population tested. This graphical abstract is also available at Tidbit: https://tidbitapp.io/tidbits/pcr-on-respiratory-tract-specimens-of-immunocompromised-patients-to-diagnose-pneumocystosis-pcp-a-systematic-review-and-meta-analysis-89aa7a50-efbc-4ebb-8f20-c17d207e8d8e?utm_campaign=tidbitlinkshare&utm_source=ITP

Electroluminescence (EL) is a powerful tool for the qualitative mapping of the electronic properties of solar modules, where electronic and electrical defects are easily detected. However, a direct quantitative prediction of electrical module performance purely based on electroluminescence images has yet to be accomplished. Our novel approach, called “EL power prediction of modules” (ELMO) as presented here, used just two electroluminescence images to predict the electrical loss of mechanically damaged modules when compared to their original (data sheet) power. First, using this method, two EL images taken at different excitation currents were converted into locally resolved (relative) series resistance images. From the known, total applied voltage to the module, we were then able to calculate absolute series resistance values and the real distribution of voltages and currents. Then, we reconstructed the complete current/voltage curve of the damaged module. We experimentally validated and confirmed the simulation model via the characterization of a commercially available photovoltaic module containing 60 multicrystalline silicon cells, which were mechanically damaged by hail. Deviation between the directly measured and predicted current/voltage curve was less than 4.3% at the maximum power point. For multiple modules of the same type, the level of error dropped below 1% by calibrating the simulation. We approximated the ideality factor from a module with a known current/voltage curve and then expand the application to modules of the same type. In addition to yielding series resistance mapping, our new ELMO method was also capable of yielding parallel resistance mapping. We analyzed the electrical properties of a commercially available module, containing 72 monocrystalline high-efficiency back contact solar cells, which suffered from potential induced degradation. For this module, we predicted electrical performance with an accuracy of better than 1% at the maximum power point.

The effective minority carrier lifetime in semiconductors with recombination inhomogeneities depends on the spatial distribution of recombination sites and not only on their absolute number. We use time‐resolved microwave reflection measurements to monitor the carrier recombination in silicon wafers with a periodic metallization pattern on one surface. This contact scheme simulates the distribution of sites of enhanced carrier recombination. The experiments reveal a sensitive dependence of the effective minority carrier lifetime on the interdistance and the size—i.e., the scaling—of the metallization pattern at fixed metallization area ratio. This so‐called scaling effect occurs whenever the size and the interdistance of recombination sites are comparable to the minority carrier diffusion length. Our experiments are in good agreement with results from a new analytical three‐dimensional simulation which is based on the solution of the electronic transport equations in Fourier space. Our model is applicable to the optimization of the backside ohmic contact pattern for high efficiency solar cells.

Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO₂). This design concept allows for the highest efficiencies. Here, we report on a selective laser activation process, resulting in highly doped p⁺⁺-type poly Si on top of the SiO₂. In this double-layer structure, the p⁺⁺-poly Si layer serves as a layer for transporting the generated holes from the bulk to a metal contact and, therefore, needs to be highly conductive for holes. High boron-doping of the poly Si layers is one approach to establish the desired high conductivity. In a laser activation step, a laser pulse melts the poly Si layer, and subsequent rapid cooling of the Si melt enables electrically active boron concentrations exceeding the solid solubility limit. In addition to the high conductivity, the high active boron concentration in the poly Si layer allows maskless patterning of p⁺⁺-poly Si/SiO₂ layers by providing an etch stop layer in the Si etchant solution, which results in a locally structured p⁺⁺-poly Si/SiO₂ after the etching process. The challenge in the laser activation technique is not to destroy the thin SiO₂, which necessitates fine tuning of the laser process. In order to find the optimal processing window, we test laser pulse energy densities (H_p) in a broad range of 0.7 J/cm² ≤ H_p ≤ 5 J/cm² on poly Si layers with two different thicknesses d_{poly Si,1} = 155 nm and d_{poly Si,2} = 264 nm. Finally, the processing window 2.8 J/cm²≤ H_p ≤ 4 J/cm² leads to the highest sheet conductance (G_sh) without destroying the SiO₂ for both poly Si layer thicknesses. For both tested poly Si layers, the majority of the symmetric lifetime samples processed using these H_p achieve a good passivation quality with a high implied open circuit voltage (iV_OC) and a low saturation current density (J₀). The best sample achieves iV_OC = 722 mV and J₀ = 6.7 fA/cm² per side. This low surface recombination current density, together with the accompanying measurements of the doping profiles, suggests that the SiO₂ is not damaged during the laser process. We also observe that the passivation quality is independent of the tested poly Si layer thicknesses. The findings of this study show that laser-activated p⁺⁺-poly Si/SiO₂ are not only suitable for integration into advanced passivated contact solar cells, but also offer the possibility of maskless patterning of these stacks, substantially simplifying such solar cell production.

This study identifies unstable and soluble layers in commercial photovoltaic modules during 1.5 year long-term leaching. Our experiments cover modules from all major photovoltaic technologies containing solar cells from crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). These technologies cover more than 99.9% of the world market. We cut out module pieces of 5 × 5 cm${}^2$ in size from these modules and leached them in water-based solutions with pH 4, pH 7, and pH 11, in order to simulate different environmental conditions. Unstable layers open penetration paths for water-based solutions; finally, the leaching results in delamination. In CdTe containing module pieces, the CdTe itself and the back contact are unstable and highly soluble. In CIGS containing module pieces, all of the module layers are more or less soluble. In the case of c-Si module pieces, the cells’ aluminum back contact is unstable. Module pieces from a-Si technology also show a soluble back contact. Long-term leaching leads to delamination in all kinds of module pieces; delamination depends strongly on the pH value of the solutions. For low pH-values, the time dependent leaching is well described by an exponential saturation behavior and a leaching time constant. The time constant depends on the pH, as well as on accelerating conditions such as increased temperature and/or agitation. Our long-term experiments clearly demonstrate that it is possible to leach out all, or at least a large amount, of the (toxic) elements from the photovoltaic modules. It is therefore not sufficient to carry out experiments just over 24 h and to conclude on the stability and environmental impact of photovoltaic modules.

Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification, the silicon is doped without any lattice defects. Depending on laser energy and on the kind of precursor, the precursor either melts or evaporates during the laser process. For high enough laser energies, even parts of the silicon’s surface evaporate. Here, we present a unified model and simulation program, which considers all these cases. We exemplify our model with experiments and simulations of laser doping from a boron oxide precursor layer. In contrast to previous models, we are able to predict not only the width and depth of the patterns on the deformed silicon surface but also the doping profiles over a wide range of laser energies. In addition, we also show that the diffusion of the boron atoms in the molten Si is boosted by a thermally induced convection in the silicon melt: the Gaussian intensity distribution of the laser beam increases the temperature-gradient-induced surface tension gradient, causing the molten Si to circulate by Marangoni convection. Laser pulse energy densities above H > 2.8 J/cm² lead not only to evaporation of the precursor, but also to a partial evaporation of the molten silicon. Without considering the evaporation of Si, it is not possible to correctly predict the doping profiles for high laser energies. About 50% of the evaporated materials recondense and resolidify on the wafer surface. The recondensed material from each laser pulse forms a dopant source for the subsequent laser pulses.