Jingbo Li

Dr. Jingbo Li

School of Computer Science and Technology, Xi'an Jiaotong University

Research Focus & Metrics

Academic Career Length

23Years (2004-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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20 January 2009 in Physical Review Letters
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Journal Article
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YGYanqin Gai
Yanqin Gai
JLJingbo Li
Jingbo Li
SLShu-Shen Li
Shu-Shen Li
JXJian-Bai Xia
Jian-Bai Xia
SWSu-Huai Wei
Su-Huai Wei
To improve the photoelectrochemical activity of TiO2 for hydrogen production through water splitting, the band edges of TiO2 should be tailored to match with visible light absorption and the hydrogen or oxygen production levels. By analyzing the band structure of TiO2 and the chemical potentials of the dopants, we propose that the band edges of TiO2 can be modified by passivated codopants such as (Mo+C) to shift the valence band edge up significantly, while leaving the conduction band edge almost unchanged, thus satisfying the stringent requirements. The design principle for the band-edge modification should be applicable to other wide-band-gap semiconductors.

17 October 2013 in Discover Nano
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Journal Article
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QYQu Yue
Qu Yue
ZSZhengzheng Shao
Zhengzheng Shao
SCShengli Chang
Shengli Chang
JLJingbo Li
Jingbo Li
Using first-principles calculations, we investigate the adsorption of various gas molecules (H2, O2, H2O, NH3, NO, NO2, and CO) on monolayer MoS2. The most stable adsorption configuration, adsorption energy, and charge transfer are obtained. It is shown that all the molecules are weakly adsorbed on the monolayer MoS2 surface and act as charge acceptors for the monolayer, except NH3 which is found to be a charge donor. Furthermore, we show that charge transfer between the adsorbed molecule and MoS2 can be significantly modulated by a perpendicular electric field. Our theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application.

5 September 2014 in Advanced Functional Materials
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Journal Article
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NHNengjie Huo
Nengjie Huo
JKJun Kang
Jun Kang
ZWZhongming Wei
Zhongming Wei
SLShu‐Shen Li
Shu‐Shen Li
JLJingbo Li
Jingbo Li
SWSu‐Huai Wei
Su‐Huai Wei

3 February 2015 in Nano Letters
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Journal Article
Closed access
SYShengxue Yang
Shengxue Yang
CWCong Wang
Cong Wang
HSHasan Sahin
Hasan Sahin
HCHui Chen
Hui Chen
YLYan Li
Yan Li
STSefaattin Tongay
Sefaattin Tongay

9 June 2014 in Scientific Reports
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Journal Article
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NHNengjie Huo
Nengjie Huo
SYShengxue Yang
Shengxue Yang
ZWZhongming Wei
Zhongming Wei
SLShu-Shen Li
Shu-Shen Li
JXJian-Bai Xia
Jian-Bai Xia
JLJingbo Li
Jingbo Li
The photoelectrical properties of multilayer WS2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm2/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (Rλ) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH3 molecules can serve as electron donors to enhance the Rλ and EQE significantly. Under the NH3 atmosphere, the maximum Rλ and EQE can even reach 884 A/W and 1.7 × 105%, respectively. This work demonstrates that multilayer WS2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS2-based optoelectronics.

5 January 2009 in Physical Review Letters
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Journal Article
Closed access
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HPHaowei Peng
Haowei Peng
HXHongjun Xiang
Hongjun Xiang
SWSu-Huai Wei
Su-Huai Wei
SLShu-Shen Li
Shu-Shen Li
JXJian-Bai Xia
Jian-Bai Xia
JLJingbo Li
Jingbo Li
The origin of ferromagnetism in d0 semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d0 semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. The quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in ZnO nanowires. The characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model.