The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not yet clearly understood. In this study, a 16-pixel CdZnTe X-ray photon counting detector with a non-uniform counting performance is investigated. The deep-level defect characteristics of each pixel region are analyzed by the current–voltage curves (I–V), infrared (IR) optical microscope photography, photoluminescence (PL) and thermally stimulated current (TSC) measurements, which indicate that the difference in counting performance is caused by the non-uniformly distributed deep-level defects in the CdZnTe crystals. Based on these results, we conclude that the CdZnTe detectors with a good photon counting performance should have a larger ${\mathrm{Te}}_{\mathrm{cd}}^{2+}$ and Cd vacancy-related defect concentration and a lower A-center and Te_i concentration. We consider the deep hole trap Te_i, with the activation energy of 0.638–0.642 eV, to be the key deep-level trap affecting the photon counting performance. In addition, a theoretical model of the native defect reaction is proposed to understand the underlying relationships of resistivity, deep-level defect characteristics and photon counting performance.

Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe detectors. In this paper, the performance of linear array 1 × 16-pixel CdZnTe photon counting detectors operated under different applied biases is investigated. The relation between experimental critical flux and applied bias show an approximate quadratic dependence, which agrees well the theoretical prediction. The underlying relationship among X-ray photocurrents, carrier transport properties, and photon counting performance was obtained by analyzing X-ray current–voltage and time current curves. The typical X-ray photocurrent curve can be divided into three regions, which may be explained by the photoconductive gain mechanism and electric field distortion characteristics. To keep CdZnTe photon counting detectors working in a “non-polarized state”, the applied bias should be set on the left side of the “valley region” (high bias direction) in the X-ray I-V curves. This provides an effective measurement for determining the proper working bias of CdZnTe detectors and screening photon counting detector crystals.