Raid Ismail

Dr. Raid Ismail

orcid

Research Focus & Metrics

Academic Career Length

21Years (2006-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
1 August 2015 in Materials Science and Engineering: C
Verified
Journal Article
Closed access
RIRaid Ismail
Raid Ismail
Ghassan M. SulaimanGhassan M. Sulaiman
Ghassan M. Sulaiman
SASafa A. Abdulrahman
Safa A. Abdulrahman
TMThorria R. Marzoog
Thorria R. Marzoog

27 March 2021 in Journal of Inorganic and Organometallic Polymers and Materials
Verified
Journal Article
Closed access
PDF file
HBHasan H. Bahjat
Hasan H. Bahjat
RIRaid Ismail
Raid Ismail
GSGhassan M. Sulaiman
Ghassan M. Sulaiman
MJMajid S. Jabir
Majid S. Jabir

1 September 2019 in Materials Research Express
Verified
Journal Article
Closed access
PDF file
Evan T. SalimEvan T. Salim
Evan T. Salim
RIRaid Ismail
Raid Ismail
HHHalemah T Halbos
Halemah T Halbos

12 August 2017 in Applied Nanoscience
Verified
Journal Article
Open access
PDF file
RIRaid Ismail
Raid Ismail
SZShihab A. Zaidan
Shihab A. Zaidan
RKRafal M. Kadhim
Rafal M. Kadhim
In this study, we have prepared aluminum oxide (Al2O3 nanoparticles) NPs with size ranging from 50 to 90 nm by laser ablation of aluminum target in ethanol. The effect of laser fluence on the structural, morphological and optical properties of Al2O3 was demonstrated and discussed. X-ray diffraction XRD results confirm that the synthesized Al2O3 NPs are crystalline in nature. The sample prepared at 3.5 J/cm2/pulse exhibits single phase of γ-Al2O3, while the XRD patterns of the nanoparticles synthesized at 5.3 and 7.5 J/cm2/pulse show the co-existence of the α-Al2O3 and γ-Al2O3 phases. Nanostructured Al2O3 films have been used as anti-reflecting coating and surface passivation layer to improve the photoresponse characteristics of silicon photodiode. The experimental data showed that the optical energy gap decreases from 5.3 to 5 eV as the laser fluence increases from 3.5 to 7.3 J/cm2. The lowest optical reflectivity was found for silicon photodiode deposited with a single layer of Al2O3 prepared at 3.5 J/cm2/pulse. The effect of laser fluence on the refractive index and extinction coefficient of the nanostructured Al2O3 film was studied. The photosensitivity of the silicon photodiode increased from 0.4 to 1.4 AW−1 at 800 nm after depositing Al2O3 prepared at 3.5 J/cm2/pulse, followed by rapid thermal annealing at 400 °C for 60 s.

20 April 2011 in Applied Nanoscience
Verified
Journal Article
Closed access
PDF file
RIRaid Ismail
Raid Ismail
AAAbdulrahman K. Ali
Abdulrahman K. Ali
MIMukhlis M. Ismail
Mukhlis M. Ismail
KHKhaleel I. Hassoon
Khaleel I. Hassoon

4 April 2020 in Optical and Quantum Electronics
Verified
Journal Article
Closed access
PDF file
AFAbdulqader D. Faisal
Abdulqader D. Faisal
RIRaid Ismail
Raid Ismail
WKWafaa K. Khalef
Wafaa K. Khalef
ESEvan T. Salim
Evan T. Salim