We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 μm wavelength range with 3 mW output and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.

The development of large-scale optical quantum information processing circuits ground on the stability and reconfigurability enabled by integrated photonics. We demonstrate a reconfigurable 8×8 integrated linear optical network based on silicon nitride waveguides for quantum information processing. Our processor implements a novel optical architecture enabling any arbitrary linear transformation and constitutes the largest programmable circuit reported so far on this platform. We validate a variety of photonic quantum information processing primitives, in the form of Hong-Ou-Mandel interference, bosonic coalescence/anti-coalescence and high-dimensional single-photon quantum gates. We achieve fidelities that clearly demonstrate the promising future for large-scale photonic quantum information processing using low-loss silicon nitride.

Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats, with applications in long-distance quantum-secured communication, quantum-accelerated information processing and nonclassical metrology. However, the quantum light sources developed so far have relied on external bulky excitation lasers, making them impractical prototype devices that are not reproducible, hindering their scalability and transfer out of the laboratory into real-world applications. Here we demonstrate a fully integrated quantum light source that overcomes these challenges through the integration of a laser cavity, a highly efficient tunable noise suppression filter (>55 dB) exploiting the Vernier effect, and a nonlinear microring for entangled photon-pair generation through spontaneous four-wave mixing. The hybrid quantum source employs an electrically pumped InP gain section and a Si₃N₄ low-loss microring filter system, and demonstrates high performance parameters, that is, pair emission over four resonant modes in the telecom band (bandwidth of ~1 THz) and a remarkable pair detection rate of ~620 Hz at a high coincidence-to-accidental ratio of ~80. The source directly creates high-dimensional frequency-bin entangled quantum states (qubits/qudits), as verified by quantum interference measurements with visibilities up to 96% (violating Bell’s inequality) and by density matrix reconstruction through state tomography, showing fidelities of up to 99%. Our approach, leveraging a hybrid photonic platform, enables scalable, commercially viable, low-cost, compact, lightweight and field-deployable entangled quantum sources, quintessential for practical, out-of-laboratory applications such as in quantum processors and quantum satellite communications systems.

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si ${}_3$ N ${}_4$ in SiO ${}_2$ ) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 $\mathsf{\mu }$ m wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

In this paper we present a novel fabrication technique for silicon nitride (Si₃N₄) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si₃N₄. Using this technique no stress-induced cracks in the Si₃N₄ layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology, and quantum technology. Here we present, to our knowledge, the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss S i 3 N 4 feedback circuit based on microring resonators, we obtain a spectral coverage of 10.8 nm around 684.4 nm wavelength with up to 4.8 mW output power. The measured intrinsic linewidth is 2.3 ± 0.2 k H z .