We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness films of GST present high-quality resonances that are spectrally shifted by laser-induced structural transitions, providing reflectivity and transmission switching contrast ratios of up to 5:1 (7 dB) at visible/near-infrared wavelengths selected by design.

Barium titanate (BaTiO₃) is a synthetic crystal used in electromechanical transducers and multilayer ceramic capacitors. Since it is not available in nature, a variety of growth methods has been employed to produce in large scale, with high quality and low‐cost. BaTiO₃, as a metal oxide meets practical requirements such as physical hardness, stability and tunable optoelectronic properties. The plethora of characteristics renders it functional in diverse fields of applications from energy harvesting to biophotonics. Related to optical properties, it is a dielectric material from the near ultraviolet to the near‐infrared part of the spectrum with low optical losses and relatively high refractive index. The strong second‐order nonlinear response has resulted in several breakthroughs in bioimaging, while its intrinsic electrooptic response is among the highest within the existing materials. The properties of the BaTiO₃ may also be modified by doping or hybridization with other materials. This review presents the basic optoelectronic properties of BaTiO₃, reports on the recent advances in BaTiO₃ nanostructures and thin films related to photonic applications, and oversees photonic technologies that may benefit from this material platform in the near future.

Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge₂:Sb₂:Te₅ or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices.

By harnessing the resonant nature of localized electromagnetic modes in a nanostructured silicon membrane, an all-dielectric metamaterial can act as nonlinear medium at optical telecommunications wavelengths. We show that such metamaterials provide extremely large optomechanical nonlinearities, operating at intensities of only a few μW per unit cell and modulation frequencies as high as 152 MHz, thereby offering a path to fast, compact, and energy efficient all-optical metadevices.

Metal‐oxides are promising candidates to substitute silicon in intra‐chip optical interconnects, as they exhibit great electric field tuning capabilities. The development of crystal ion slicing of thin films from bulk crystals and the advances over epitaxial growth have allowed the integration of metal‐oxides on a single chip. In terms of performance, they possess strong electro‐optic response over broad bandwidths across near‐infrared. However, lattice and thermal expansion coefficient mismatch limits the compatibility with available substrates and other materials, while physical hardness makes high quality nanostructures difficult to implement. Here, a novel concept of electro‐optic (EO) switching is introduced: an adjacent BaTiO₃ nanoparticle film to a plasmonic metasurface provides reflection changes up to 0.15% under 4 V of control signal for modulation frequencies up to 20 MHz, in the near‐infrared. The nanoparticle films show EO coefficients (37.04 ± 25.6 pm V⁻¹) comparable to lithium niobate crystals, are deposited uniformly over large scale and on any type of substrate, while retain optical nonlinear properties (e.g. second‐harmonic generation). Photonic nanostructures such as metasurfaces incorporated with nanoparticle films can harness the multifunctional properties of metal‐oxides such as BaTiO₃ to form a new family of switchable nano‐devices across the entire visible to near‐infrared part of the spectrum.