The Al₄C₃ phase was precipitated via a reaction of graphene (Gr) with Al during selective laser melting (SLM). The interfacial nature of the Gr (0001)/Al₄C₃ (0001) interface was determined using the first-principle calculation. The simulation results showed that the influence of the stacking site on the interfacial structure was limited and the Al-termination interface presented a more stable structure than the C-termination interface. The Al-termination-CH site interface had the largest work of adhesion (6.28 J/m²) and the smallest interfacial distance (2.02 Å) among the four interfacial structures. Mulliken bond population analysis showed that the bonding of the Al-termination interface was a mixture of covalent and ionic bonds and there was no chemical bonding in the C-termination interface.

In this study, we successfully fabricated Fe₆₁Zr₁₀Co₅Mo₇W₂B₁₅ and Ni₆₁Nb₁₉.₂Ta₁₉.₈ amorphous fibers (AFs) using the melt-extraction method. This method ensured a rapid cooling, uniform quality, minimal defects, and superior performance. Magnetic property analysis revealed that the Fe-based AFs exhibited a single-slope magnetization curve characteristic of paramagnetic or diamagnetic materials, while the Ni-based AFs displayed a rectangular curve with low magnetic hysteresis, typical of ferromagnetic materials. The axial saturation magnetization of as-prepared Ni-based AFs is ~1.5 × 10⁻⁷ emu/g, with a coercivity of about 85 Oe. The statistical analysis of tensile tests indicated that Ni-based AFs possess a higher fracture threshold of 2440 ± 199 MPa and a reliability of 14.7, demonstrating greater material safety and suitability for high-performance applications. As opposed to Ni-based AFs, Fe-based AFs present a fracture threshold and of 1582 ± 692 MPa and a reliability 4.2. Moreover, under cyclic loading conditions, Ni-based AFs exhibited less residual deformation and superior elastic recovery with a fracture strength of 2800 MPa. These findings highlight the potential of Ni-based AFs for advanced engineering applications, particularly where high strength, durability, and excellent magnetic properties are required, paving the way for their integration into next-generation technologies.

The bonding strength of a Gr/Mg₂Si interface was calculated by first principles. Graphene can form a stable, completely coherent interface with Mg₂Si. When the (0001) _Gr/(001) Mg₂Si crystal plane is combined, the mismatch degree is 5.394%, which conforms to the two-dimensional lattice mismatch theory. At the interface between Gr/Mg₂Si, chemical bonds were not formed, there was only a strong van der Waals force; the interfaces composed of three low index surfaces (001), (011) and (111) of Mg₂Si and Gr (0001) have smaller interfacial adhesion work and larger interfacial energy, the interfacial energy of Gr/Mg₂Si is much larger than that of α-Al/Al melt and Gr/Al interfacial (0.15 J/m², 0.16 J/m²), and the interface distance of a stable interface is larger than the bond length of a chemical bond. The interface charge density difference diagram and density of states curve show that there is only strong van der Waals force in a Gr/Mg₂Si interface. Therefore, when the Gr/AlSi10Mg composite is stressed and deformed, the Gr/Mg₂Si interface in the composite is easy to separate and become the crack propagation source. The Gr/Mg₂Si interface should be avoided in the preparation of Gr/AlSi10Mg composite.