Optical phase shifters constitute the fundamental building blocks that enable programmable photonic integrated circuits (PICs)—the cornerstone of on-chip classical and quantum optical technologies [1, 2]. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off—they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb₂Se₃, a bi-state transparent phase change material (PCM). A zero-static power and electrically-driven phase shifter is realized on a CMOS-backend silicon-on-insulator platform, featuring record phase modulation up to 0.09 π/µm and a low insertion loss of 0.3 dB/π, which can be further improved upon streamlined design. Furthermore, we demonstrate phase and extinction ratio trimming of ring resonators and pioneer a one-step partial amorphization scheme to enhance speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices is demonstrated based on the ultra-compact PCM phase shifter.

The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the effective work function and reduces D_it. Thinner TiN improves the variation in effective work function and reduces gate dielectric charge. Doping of the polysilicon above the TiN metal gate with B or P has negligible effect on the effective work function. The work-function-tuned TiN is integrated into ultralow-power fully depleted silicon-on-insulator CMOS transistors optimized for subthreshold operation at 0.3 V. The following performance metrics are achieved: 64-80-mV/dec subthreshold swing, PMOS/NMOS on-current ratio near 1, 71% reduction in C_gd, and 55% reduction in V_t variation when compared with conventional transistors, although significant short-channel effects are observed.