The effects of anisotropic dielectric properties of ferroelectric Ba1−xSrxTiO3 (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown on (001), (011), and (111) MgO substrates, respectively, by the pulsed laser deposition method. The microwave properties of orientation engineered BST films were investigated using interdigital capacitors. The calculated dielectric constant tunability with 40 V dc bias variation and the calculated dielectric quality factor values for IDT capacitors based on (001), (011), and (111) oriented BST films at 9 GHz with no dc bias were about 47%, 55%, 43%, and 12, 14, 21, respectively.

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on $\mathrm{Ga}\mathrm{N}∕c\text{-}{\mathrm{Al}}_2{\mathrm{O}}_3$ substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of $80–140\mathrm{nm}$ and an average height of about $2\mu \mathrm{m}$ were grown on a self-formed ZnO thin film during the growth on the $\mathrm{Ga}\mathrm{N}∕c\text{-}{\mathrm{Al}}_2{\mathrm{O}}_3$ substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

Ultra-sensitive RGO gas sensors with a facile preparation method are presented. The gas sensor composed of RGO nanofibers showed excellent sensitivity to NO ₂ gas.

Compositionally graded (Bax, Sr1−x)TiO3 (BST) thin films were deposited on MgO substrates by pulsed laser ablation. The microwave properties of the graded BST thin films were investigated at microwave frequencies with coplanar waveguide (CPW) meander-line phase shifters as a function of the direction of the composition gradient with respect to the substrate at room temperature. CPW phase shifters using graded BaTiO3(BT)→SrTiO3(ST) and ST→BT thin films exhibited a differential phase shift of 73° and 22° at 10 GHz with a dc bias voltage of 150 V, respectively. The figure of merit of the phase shifters at 10 GHz was 14.6 deg/dB for the graded BT→ST film, and 10 deg/dB for the graded ST→BT film. The graded BT→ST thin films showed a larger phase tuning than the ST→BT thin films. The microwave properties of the graded BST films depended strongly on the crystalline structure and the direction of the composition gradient with respect to the substrate.