Analysis of the literature data on the reasons for the development of mechanical stresses in epitaxial, polycrystalline, and amorphous films during their formation and under various external influences is carried out. The mechanism of the appearance of internal stresses during heteroepitaxial growth of films caused by the mismatch of the crystal lattice constants of the film and substrate is described. The relationship between the development of mismatch stresses in heteroepitaxial films and changes in the nature of their growth is shown. Models of the occurrence of compressive and tensile stresses in polycrystalline films due to the formation and coalescence of islands at the initial stage of their growth are considered. The regularities of the evolution of internal stresses in continuous films are discussed depending on the conditions of their deposition, as well as their chemical composition, structure, and mechanical properties. The mechanisms of development of internal stresses in thin films associated with the formation of point defects in them, the incorporation of impurities, and phase transformations occurring in the deposition process are reviewed. External factors that lead to the appearance of stresses in thin films during their storage and operation are considered in detail.

The mechanical properties of thin Ag films of equal thickness containing grains of various sizes were studied. The film hardness was measured using the Oliver-Pharr techniques based on indentation work calculations or on direct measurements of the area of pyramid imprints in AFM images. In order to avoid the influence of a substrate on the measured hardness, a technique was developed to determine the true values of the film hardness. It was established that the hardness of Ag films decreases with an increase in mean grain size, whereas the elastic modulus remains almost unchanged. It was shown that the dependence of the yield stress of Ag films on grain size does not obey the classical Hall-Petch law.