We present the structure and anisotropic magnetic and electrical transport properties on the flux-grown PrAlGe single crystal, a recently proposed magnetic Weyl semimetal candidate. From the powder and single-crystal x-ray diffraction analysis, the grown crystal is revealed to crystallize in tetragonal LaPtSi-type structure with space group of I4₁md. The PrAlGe exhibits strong Ising-type magnetic anisotropy with ferromagnetic moments ∼2.32μ_B/Pr along easy c-axis below transition temperature T_c ∼ 15 K. Accordingly, anomalous Hall effect (AHE) is observed for field (H) along c axis in contrast to a axis, and large anomalous Hall conductivity value reaches up to ∼680 Ω⁻¹ cm⁻¹ close to the theoretical expected value based on intrinsic Berry-curvature mechanism. Moreover, the linear scaling behaviors between the anomalous Hall resistivity and longitudinal resistivity also support the intrinsic Karplus-Luttinger mechanism as a dominant role on the observed AHE rather than extrinsic scattering mechanism.

P-type Bi 2− _x Sb _x Te ₃ compounds are crucial for thermoelectric applications at room temperature, with Bi _0.5 Sb _1.5 Te ₃ demonstrating superior performance, attributed to its maximum density-of-states effective mass ( m *). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi 2− _x Sb _x Te ₃ (00 l ) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the Γ ¯ - M ¯ direction contributes to the maximum m * of Bi _0.5 Sb _1.5 Te ₃ . Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi _0.5 Sb _1.5 Te ₃ , allowing the extra valence band along Γ ¯ - K ¯ to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi _0.5 Sb _1.5 Te ₃ ’s superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi 2− _x Sb _x Te ₃ .

Organic molecular layers at both hole- and electron-selective interfaces are essential for achieving high-efficiency perovskite solar cells, yet their limited photothermal stability hinders long-term device operation. We used atomic layer deposition to deposit hafnium oxide (HfO _x ) interlayers to stabilize these molecular interfaces under operational stress. At the NiO _x /self-assembled monolayer (SAM) interface, a hydroxyl-rich, Lewis-acidic n-HfO _x layer (n denotes negative fixed-charge polarity) promoted tridentate phosphonic acid coordination and enhanced SAM retention and thermal durability. At the perovskite/C ₆₀ interface, the p-HfO _x layer (p denotes positive fixed-charge polarity) anchored 3-fluorophenylethylammonium iodide (3F-PEAI) through Hf⋯F interactions that also acted as a diffusion barrier against halide- and silver-ion migration. Devices achieved power conversion efficiencies as high as 27.1% (26.6% certified) and retained 90% of an initial efficiency of ~23% for ~5000 hours under 1-sun equivalent illumination at 85°C in ambient air.