Masafumi Yamaguchi

Dr. Masafumi Yamaguchi

Toyota Technological Institute, Nagoya 468-8511, Japan

Research Focus & Metrics

Academic Career Length

34Years (1993-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 June 2021 in Journal of Applied Physics
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Journal Article
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Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
FDFrank Dimroth
Frank Dimroth
JGJohn F. Geisz
John F. Geisz
NENicholas J. Ekins-Daukes
Nicholas J. Ekins-Daukes
In order to realize a clean energy society by using renewable energies, high-performance solar cells are a very attractive proposition. The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. As state-of-the-art of single-junction solar cells are approaching the Shockley–Queisser limit of 32%–33%, an important strategy to raise the efficiency of solar cells further is stacking solar cell materials with different bandgaps to absorb different colors of the solar spectrum. The III–V semiconductor materials provide a relatively convenient system for fabricating multi-junction solar cells providing semiconductor materials that effectively span the solar spectrum as demonstrated by world record efficiencies (39.2% under one-sun and 47.1% under concentration) for six-junction solar cells. This success has inspired attempts to achieve the same with other materials like perovskites for which lower manufacturing costs may be achieved. Recently, Si multi-junction solar cells such as III–V/Si, II–VI/Si, chalcopyrite/Si, and perovskite/Si have become popular and are getting closer to economic competitiveness. Here, we discuss the perspectives of multi-junction solar cells from the viewpoint of efficiency and low-cost potential based on scientific and technological arguments and possible market applications. In addition, this article provides a brief overview of recent developments with respect to III–V multi-junction solar cells, III–V/Si, II–VI/Si, perovskite/Si tandem solar cells, and some new ideas including so-called 3rd generation concepts.

2 March 2018 in Journal of Physics D: Applied Physics
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Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
KLKan-Hua Lee
Kan-Hua Lee
Kenji ArakiKenji Araki
Kenji Araki
NKNobuaki Kojima
Nobuaki Kojima
Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley–Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III–V semiconductor solar cells, which is a long-researched topic since the emergence of III–V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

27 January 2020 in Applied Sciences
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Kenji ArakiKenji Araki
Kenji Araki
Yasuyuki OtaYasuyuki Ota
Yasuyuki Ota
Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
The energy yield of vehicle-integrated photovoltaics (VIPV) differs from that of standard photovoltaics (PV). It is mainly by the difference of the solar irradiance onto the car roof and car bodies as well as its curved shape. Both meaningful and practical modeling and measurement of solar irradiance for VIPV need to be established, rather than the extension of the current technologies. The solar irradiance is modeled by a random distribution of shading objects and car orientation with the correction of the curved surface of the PV modules. The measurement of the solar irradiance onto the car roof and car body is done using five pyranometers in five local axes on the car for one year. The measured dynamic solar irradiance onto the car body and car roof is used for validation of the solar irradiance model in the car.

17 July 2018 in Coatings
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Journal Article
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Kenji ArakiKenji Araki
Kenji Araki
LJLiang Ji
Liang Ji
GKGeorge Kelly
George Kelly
Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
A car-roof photovoltaic has enormous potential to change our society. With this technology, 70% of a car can run on the solar energy collected by the solar panel on its roof. Unfortunately, it is not a simple extension of conventional photovoltaic technology. This paper lists what we need to do to achieve the goal of running a majority of cars on renewable solar energy, after clarification of the difference to conventional photovoltaic technology. In addition to technological development, standardization will be important and this list was made highlighting standardization.

21 September 2020 in Progress in Photovoltaics: Research and Applications
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Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
TMTaizo Masuda
Taizo Masuda
KAKenji Araki
Kenji Araki
DSDaisuke Sato
Daisuke Sato
KLKan‐Hua Lee
Kan‐Hua Lee
MYMitsuhiro Yamazaki
Mitsuhiro Yamazaki

21 April 1997 in Applied Physics Letters
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Masafumi YamaguchiMasafumi Yamaguchi
Masafumi Yamaguchi
TOTakeshi Okuda
Takeshi Okuda
STStephen J. Taylor
Stephen J. Taylor
The observation of minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP is reported. 1-MeV electron irradiation results demonstrate superior radiation-resistance of InGa0.5P0.5 solar cells compared to GaAs-on-Ge cells. Moreover, minority-carrier injection under forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP solar cell properties. These results suggest that the radiation-resistance of InGaP-based devices such as InGaP/GaAs(/Ge) multijunction solar cells and InGaP(As) light-emitting devices is further improved under minority-carrier injection condition.