The scientific activity of Dr Matteo Bosi has always been focused on epitaxial deposition by means of metal organic vapour phase epitaxy (MOVPE) of semiconductor materials for photovoltaic, sensor, and optoelectronic devices. During his career, he has studied the epitaxy/synthesis of arsenides and phosphides (GaAs, InGaP, and AlGaAs), germanium, SiC, diluted nitrides (GaAsN) and III-nitrides (GaN and InGaN), nanowires (Ge and SiC), and transition metal dichalcogenides (MoS2) and oxides (TiO2 and Ga2O3). Dr Bosi has attended about 20 international conferences, with several invited talks, and he is the author or coauthor of about 100 papers in international peer-reviewed journals.