Silicon photonic devices used in the photonics industry over the past three decades have helped in realizing large-scale photonic integrated circuits. Silicon nitride (Si ₃ N ₄ ) is another CMOS-compatible platform that provides several advantages such as low loss, high optical power tolerance, and broad spectral operation band from visible to infrared wavelengths. Recently, the combination of Si ₃ N ₄ waveguide technology with silicon photonics and III-V materials has opened up new areas in on-chip applications. Researchers in the field are primarily focusing on its applications such as on-chip gas sensing, nonlinear optical signal processing, and label-free biosensors based on photonic integrated circuits. In this review paper, we discuss Si ₃ N ₄ material-based platforms for a variety of applications with devices ranging from passive to active and hybrid photonic devices.

This article addresses the past, present, and future status of hybrid plasmonic waveguides (HPWs). It presents a comprehensive review of HPW-based photonic integrated circuits (PICs), covering both passive and active devices, as well as potential application of on-chip HPW-based devices. HPW-based integrated circuits (HPWICs) are compatible with complementary metal oxide semiconductor technology, and their matched refractive indices enables the adaptation of existing fabrication processes for silicon-on-insulator designs. HPWs combine plasmonic and photonic waveguide components to provide strong confinement with longer propagation length Lp of HP modes with nominal losses. These HPWs are able to make a trade-off between low loss and longer Lp, which is not possible with independent plasmonic and photonic waveguide components owing to their inability to simultaneously achieve low propagation loss with rapid and effective all-optical functionality. With HPWs, it is possible to overcome challenges such as high Ohmic losses and enhance the functional performance of PICs through the use of multiple discrete components. HPWs have been employed not only to guide transverse magnetic modes but also for optical beam manipulation, wireless optical communication, filtering, computation, sensing of bending, optical signal emission, and splitting. They also have the potential to play a pivotal role in optical communication systems for quantum computing and within data centers. At present, HPW-based PICs are poised to transform wireless chip-to-chip communication, a number of areas of biomedical science, machine learning, and artificial intelligence, as well as enabling the creation of densely integrated circuits and highly compact photonic devices.

The research toward high-performing pressure sensors has been going on for more than two decades, with the goal of improving key parameters, namely the high gauge factor (GF) and device stability for future applications. In the present work, the piezoresistivity of the polycrystalline molybdenum disulfide (MoS2) is harnessed for pressure sensing applications with very low noise levels. The fabricated microelectromechanical systems (MEMS) pressure sensor exhibits a high GF of ~92 with pressure sensitivity of ~ $0.46 \mu \text{A}$ /Pa and a low nonlinearity of ~12% in the applied pressure range 0–20 kPa. This exceptional performance is explained based on fluctuation-induced tunneling in the polycrystalline MoS2-based pressure sensor. The tunneling barrier between two grains gets modified with the application of external pressure. Furthermore, the noise analysis of the fabricated MEMS pressure sensor shows that the noise level gets altered with the applied stress due to the modified barrier potential.

On-chip Kerr frequency combs open up unprecedented opportunities for developing compact, low-cost, and high-density wavelength-division multiplexing (WDM) techniques for optical communications and optical interconnects. However, to achieve high-density WDM channels, a large-radius microring could be used to develop a Kerr frequency comb with a small free spectral range (FSR), inevitably increasing the comb's footprint and threshold. Herein, we theoretically study a dual-mode Kerr frequency comb based on a graphene-on-silicon (GOS) microring to overcome the limitation. Theoretical results show that a TE ₀ -mode comb with a 50-dB bandwidth of 200 nm and FSR of 170 GHz, and a TE ₁ -mode comb with a 50-dB bandwidth of 130 nm and FSR of 212.4 GHz could be generated in the single GOS microring. Moreover, the TE ₀ -mode and TE ₁ -mode combs could be selectively activated via modulating the Fermi level of the graphene nanoribbons integrated on the silicon microring. The study is expected to provide a useful technique for developing on-chip coherent light sources for high-speed optical communications.