Two-terminal memory elements, or memelements, capable of co-locating signal processing and memory via history-dependent reconfigurability at the nanoscale are vital for next-generation computing materials striving to match the brain’s efficiency and flexible cognitive capabilities. While memory resistors, or memristors, have been widely reported, other types of memelements remain underexplored or undiscovered. Here we report the first example of a volatile, voltage-controlled memcapacitor in which capacitive memory arises from reversible and hysteretic geometrical changes in a lipid bilayer that mimics the composition and structure of biomembranes. We demonstrate that the nonlinear dynamics and memory are governed by two implicitly-coupled, voltage-dependent state variables—membrane radius and thickness. Further, our system is capable of tuneable signal processing and learning via synapse-like, short-term capacitive plasticity. These findings will accelerate the development of low-energy, biomolecular neuromorphic memelements, which, in turn, could also serve as models to study capacitive memory and signal processing in neuronal membranes.

It is now known that mammalian brains leverage plasticity of both chemical and electrical synapses (ES) for collocating memory and processing. Unlike chemical synapses, ES join neurons via gap junction ion channels that permit fast, threshold-independent, and bidirectional ion transport. Like chemical synapses, ES exhibit activity-dependent plasticity, which modulates the ionic conductance between neurons and, thereby, enables adaptive synchronization of action potentials. Many types of adaptive computing devices that display discrete, threshold-dependent changes in conductance have been developed, yet far less effort has been devoted to emulating the continuously variable conductance and activity-dependent plasticity of ES. Here, we describe an artificial electrical synapse (AES) that exhibits voltage-dependent, analog changes in ionic conductance at biologically relevant voltages. AES plasticity is achieved at the nanoscale by linking dynamical geometrical changes of a host lipid bilayer to ion transport via gramicidin transmembrane ion channels. As a result, the AES uniquely mimics the composition, biophysical properties, bidirectional and threshold-independent ion transport, and plasticity of ES. Through experiments and modeling, we classify our AES as a volatile memristor, where the voltage-controlled conductance is governed by reversible changes in membrane geometry and gramicidin channel density. Simulations show that AES plasticity can adaptively synchronize Hodgkin–Huxley neurons. Finally, by modulating the molecular constituents of the AES, we show that the amplitude, direction, and speed of conductance changes can be tuned. This work motivates the development and integration of ES-inspired computing devices for achieving more capable neuromorphic hardware.