The selective laser melting (SLM) process was used to fabricate an Alloy718 specimen. The microstructure and creep properties were characterized in both the as-built and post-processed SLM materials. Post-processing involved several heat treatments and a combination of hot isostatic pressing (HIP) and solution treatment and aging (STA) to homogenize the microstructure. The experimental results showed that the originally recommended heat treatment process, STA-980 °C, for cast and wrought materials was not effective for SLM-processed specimens. Obvious grain growth structures were obtained in the STA-1180 °C/1 h and STA-1180 °C/4 h specimens. However, the grain size was uneven since heavy distortion or high-density dislocation formed during the SLM process, which would be harmful for the mechanical properties of SLM-fabricated materials. The HIP+ direct aging process was the most effective method among the post-processes to improve the creep behavior at 650 °C. The creep rupture life of the HIP+ direct aging condition approached 800 h since the HIP process had the benefit of being free of pores, thus preventing microcrack nucleation and the formation of a serrated grain boundary.
Selective laser melting (SLM) in a vacuum environment is a relatively new process. Although the material is expected to undergo a gradual heat change, which will influence the microstructure and creep properties of IN718, little research has been conducted to date. Here, we compared specimens built in vacuum (V-SLM) to those built in an Ar atmosphere (Ar-SLM). We investigated the microstructure and creep properties of V-SLM, and compared the V-SLM specimen to a conventional Ar-SLM specimen. The V-SLM specimen had a larger-grained texture, and the quantity of the δ phase was much lower. In addition, the V-SLM specimen had lower amounts of aluminum and titanium oxides, which improved the stability of the γ″ phase. Thus, the V-SLM specimen showed better creep life than the Ar-SLM, due to prevention of brittle fractures along the interdendritic regions.