Self-assembly of oxides as a bottom-up approach to functional nanostructures goes beyond the conventional nanostructure formation based on lithographic techniques. Particularly, chemical solution deposition (CSD) is an ex situ growth approach very promising for high throughput nanofabrication at low cost. Whereas strain engineering as a strategy to define nanostructures with tight control of size, shape and orientation has been widely used in metals and semiconductors, it has been rarely explored in the emergent field of functional complex oxides. Here we will show that thermodynamic modeling can be very useful to understand the principles controlling the growth of oxide nanostructures by CSD, and some attractive kinetic features will also be presented. The methodology of strain engineering is applied in a high degree of detail to form different sorts of nanostructures (nanodots, nanowires) of the oxide CeO₂ with fluorite structure which then is used as a model system to identify the principles controlling self-assembly and self-organization in CSD grown oxides. We also present, more briefly, the application of these ideas to other oxides such as manganites or BaZrO₃. We will show that the nucleation and growth steps are essentially understood and manipulated while the kinetic phenomena underlying the evolution of the self-organized networks are still less widely explored, even if very appealing effects have been already observed. Overall, our investigation based on a CSD approach has opened a new strategy towards a general use of self-assembly and self-organization which can now be widely spread to many functional oxide materials.

This study investigates the mechanisms of epitaxial development and functional properties of oxide thin films (Ce_0.9Zr_0.1O_2−y, LaNiO₃, and Ba_0.8Sr_0.2TiO₃) grown on single crystal substrates (Y₂O₃:ZrO₂, LaAlO₃, and SrTiO₃) by the chemical solution deposition approach. Rapid thermal annealing furnaces are very powerful tools in this study providing valuable information of the early stages of nucleation, the kinetics of epitaxial film growth, and the coarsening of nanocrystalline phases. Advanced transmission electron microscopies, X‐ray diffraction, and atomic force microscopy are employed to investigate the film microstructure and morphology, microstrain relaxation, and epitaxial crystallization. This study demonstrates that the isothermal evolution toward epitaxial film growth follows a self‐limited process driven by atomic diffusion, and surface and interface energy minimization. All investigated oxides experience a transformation from the polycrystalline to the epitaxial phase. This study unequivocally evidences that the film thickness highly influences the epitaxial crystallization rate due to the competition between heterogeneous and homogeneous nucleation barriers and the fast coarsening of polycrystalline grains as compared to epitaxial growth. The investigated films possess good functional properties, and this study successfully confirms an improvement at long annealing times that can be correlated with grain boundary healing processes. Thick epitaxial films can be crystallized by growing sequential individual epitaxial layers.

The crystallization process and physical properties of different functional oxide thin films (Ce_0.9Zr_0.1O_2-y, LaNiO₃, Ba_0.8Sr_0.2TiO₃, and La_0.7Sr_0.3MnO₃) on single crystal substrates (Y₂O₃:ZrO₂, LaAlO₃, and SrTiO₃) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼ 3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i.e., atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20–40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1.5–4.1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times.

In this work, BaSrTiO (BST) films on LaNiO-buffered SiO/Si (LNO/SiO/Si) substrates were crystallized by pulsed laser irradiation. Solution-derived amorphous barium-strontium-titanate precursor layers were crystallized with a KrF excimer laser in oxygen ambient at fluences ranging from 50 to 75 mJ cm. With the substrate temperature set to 500 °C, the number of pulses and film thickness were varied until high-quality crystallinity could be achieved. It was found that films with a thickness of 40 nm are fully crystallized with a uniaxial {00l} orientation which is predetermined by the LaNiO orientation. On the other hand, for 160 nm thick films, crystallization was observed after 12,000 pulses in the 70 nm close to the surface, while the rest of the film remained amorphous. The large temperature difference between the film surface and interface due to the low thermal conductivity of the amorphous BST is suggested as the origin of this behavior. Films thicker than 80 nm cracked on crystallization due to the stress caused by the different thermal expansion coefficients of film and substrate, as well as the large temperature variations within the BST film.This work was financed by the Ministry of Economy and\ud Competitiveness under the projects MAT2011-28874-C02-01,\ud MAT2014-51778-C2-1-R, ENE2014-56109-C3-3- Rand Consolider Nanoselect CSD2007-00041, and by Generalitat de\ud Catalunya (2015SGR753 and Xarmae). AQ and Mdl Mare\ud also gratefulforJAE-Predocfellowship (E-08-2012-1321248)\ud and European Social Fund (E-08-2013-1028356)program.Peer Reviewe

Highly crystalline epitaxial Ba_0.8Sr_0.2TiO₃ (BST) thin-films are grown on (001)-oriented LaNiO₃-buffered LaAlO₃ substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V⁻¹.