Alexander A. Molnar

Prof. Alexander A. Molnar

Department of Semiconductor Physics, Uzhhorod National University, Uzhhorod, Zakarpats’ka Oblast’, Ukraine
orcid
Open for collaboration

Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 February 2001 in Optics Communications
Verified
Journal Article
Closed access
AGA.A. Grabar
A.A. Grabar
IKI.V. Kedyk
I.V. Kedyk
MGM.I. Gurzan
M.I. Gurzan
ISI.M. Stoika
I.M. Stoika
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
YVYu.M. Vysochanskii
Yu.M. Vysochanskii

1 May 2000 in Solid State Communications
Verified
Journal Article
Closed access
YVYu.M Vysochanskii
Yu.M Vysochanskii
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
MGM.I Gurzan
M.I Gurzan
VCV.B Cajipe
V.B Cajipe
XBX Bourdon
X Bourdon

1 February 2002 in Journal of Physics and Chemistry of Solids
Verified
Journal Article
Closed access
ISI.P Studenyak
I.P Studenyak
MKM Kranjčec
M Kranjčec
GKGy.SH Kovács
Gy.SH Kovács
IDI.D Desnica-Franković
I.D Desnica-Franković
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
VSV.YU Slivka
V.YU Slivka

1 January 2001 in Ferroelectrics
Verified
Journal Article
Closed access
YVYu. M. Vysochanskii
Yu. M. Vysochanskii
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
MGM. I. Gurzan
M. I. Gurzan
VCV. B. Cajipe
V. B. Cajipe
The low-frequency dielectric susceptibility of layered CuInP2(SexS1−x)6 mixed crystals is investigated. The morphotropic phase boundary is found between x = 0.75 and 0.8. Broadening of phase transition anomalies in CuInP2S6 is observed at substitution of sulfur atoms by selenium. At substitution of selenium by sulfur in CuInP2Se6 a second order phase transition from the paraelectric phase to an intermediate phase is clearly observed up to the morphotropic boundary, while dielectric anomalies at the first order transition from the intermediate phase to ferrielectric phase are completely extinguished.

1 December 2016 in Low Temperature Physics
Verified
Journal Article
Closed access
RYR. Yevych
R. Yevych
VHV. Haborets
V. Haborets
MMM. Medulych
M. Medulych
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
AKA. Kohutych
A. Kohutych
YVYu. Vysochanskii
Yu. Vysochanskii
The valence fluctuations which are related to the charge disproportionation of phosphorous ions P4++P4+→P3++P+5 are the origin of ferroelectric and quantum paraelectric states in Sn(Pb)2P2S6 semiconductors. They involve recharging of SnPS3 or PbPS3 structural groups which can be represented as half-filled sites in the crystal lattice. Temperature–pressure phase diagram for Sn2P2S6 compound and temperature-composition phase diagram for (PbySn1–y)2P2S6 mixed crystals, which include tricritical points and where a temperature of phase transitions decrease to 0 K, together with the data about some softening of low energy optic phonons and rise of dielectric susceptibility at cooling in quantum paraelectric state of Pb2P2S6 are analyzed by GGA electron and phonon calculations and compared with electronic correlations models. The anharmonic quantum oscillators model is developed for description of phase diagrams and temperature dependence of dielectric susceptibility.

10 September 2018 in Physical Review Applied
Verified
Journal Article
Closed access
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Ilona ZamaraiteIlona Zamaraite
Ilona Zamaraite
RYR. Yevych
R. Yevych
ADAndrius Dziaugys
Andrius Dziaugys
Alexander A. MolnarAlexander A. Molnar
Alexander A. Molnar
JBJ. Banys
J. Banys
YVYu. Vysochanskii
Yu. Vysochanskii
In bulk proper uniaxial ferroelectrics, double antiferroelectriclike hysteresis loops are observed in the case of Sn2P2S6 crystal. The quantum-anharmonic-oscillator model is proposed for the description of such a polarization-switching process. This phenomenon is related to the three-well local potential of the spontaneous-polarization fluctuations at a distinctive negative ratio of coupling constants that correspond to intersite interaction in the given sublattice and interaction between two sublattices of the modeled Sn2P2S6 crystal structure. The data obtained can be used for the development of multilevel-cell-type memory technology.