Ali Hassan

Prof. Ali Hassan

Shenzhen University
orcid

Research Focus & Metrics

Academic Career Length

11Years (2016-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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9 July 2022 in Nano Energy
Verified
Journal Article
Closed access
AHAli Hassan
Ali Hassan
ZWZhijie Wang
Zhijie Wang
YAYeong Hwan Ahn
Yeong Hwan Ahn
Muhammad AzamMuhammad Azam
Muhammad Azam
AKAbbas Ahmad Khan
Abbas Ahmad Khan
YCYu Cao
Yu Cao

17 October 2016 in Optics Express
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Journal Article
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YJYuhua Jin
Yuhua Jin
AHAli Hassan
Ali Hassan
YJYijian Jiang
Yijian Jiang
We presented a novel technique to design microlens optical beam homogenizing system for excimer lasers. As a new approach by applying freeform surface microlens array, the homogenizer can yield somehow superior beam shaping results with larger but less microlens units than conventional method. With new concept and design, the diffraction effects at the microlens apertures can be reduced substantially. Large scale and highly uniform beam profile can be realized at a relative nearby working distance after beam shaping. This is hard to achieve by conventional method. Our design method takes the real spatial energy characteristics of the excimer laser beam as the design basis, and combined with feasible optimization method. The design method is demonstrated as a real instance based, on a 193 nm ArF excimer laser in our laboratory. Moreover, to verify the effectiveness of our method, the designed freeform microlens array homogenizer has been fabricated and tested experimentally. The experimental optical performance of the homogenizer coincides well with the theoretical simulation.

7 February 2024 in Chemical Engineering Journal
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Journal Article
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Muhammad AzamMuhammad Azam
Muhammad Azam
ZKZhicheng Ke
Zhicheng Ke
JLJunsheng Luo
Junsheng Luo
ZWZhongquan Wan
Zhongquan Wan
AHAli Hassan
Ali Hassan
CJChunyang Jia
Chunyang Jia

1 March 2018 in AIP Advances
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AHAli Hassan
Ali Hassan
YJYuhua Jin
Yuhua Jin
MIMuhammad Irfan
Muhammad Irfan
YJYijian Jiang
Yijian Jiang
Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

16 January 2022 in ACS Applied Materials & Interfaces
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Journal Article
Closed access
Muhammad AzamMuhammad Azam
Muhammad Azam
YLYan-Di Luo
Yan-Di Luo
RTRong Tang
Rong Tang
SCShuo Chen
Shuo Chen
ZZZhuanghao Zheng
Zhuanghao Zheng
XZXiang-Hua Zhang
Xiang-Hua Zhang

23 May 2022 in Optik
Verified
Journal Article
Closed access
SZSaima Zafar
Saima Zafar
MZMuhammad Zubair
Muhammad Zubair
SSSyed Mujtaba Shah
Syed Mujtaba Shah
MKMuhammad Imtiaz Khan
Muhammad Imtiaz Khan
AKAbbas Ahmad Khan
Abbas Ahmad Khan
MDMuhammad Faraz Ud Din
Muhammad Faraz Ud Din