High power and high voltage applications are a major requirement in the future space missions. The feasibility and efficiency of these systems are currently limited by the space qualified silicon semiconductors, so silicon carbide devices are proposed to overcome the said limitations. However, silicon carbide needs to be operated in specific conditions to be safe to use in space applications. In addition, there are no space qualified drivers for silicon carbide and industry is hesitant to redesign completely their systems. This work proves silicon carbide MOSFETs can be used with space qualified drivers, while operating in safe operating conditions for space and still obtaining performance benefits when compared to space qualified silicon MOSFETs. To ensure the accuracy of the comparison, conduction and switching losses are directly measured in the analyzed devices, in an identical laboratory setup and space operation conditions specially designed for this work. The paper also shows how the achieved loss reduction can be used in specific space applications. The article proves silicon carbide MOSFETs are an enabling technology for efficient high-power applications in space, using well-known space qualified drivers and without having to redesign the systems.

High-power electrical systems are needed for the next space missions and the current space qualified silicon semiconductor technology is unable to provide the necessary technical figures to develop them. Following the trend on terrestrial industry, and due to the better physical characteristics when compared to silicon, the silicon carbide semiconductors are considered for their application in space, to address the challenge brought by the high-power. In close collaboration with the European space power industry, the technical characteristics of the new required semiconductors are gathered, classified, and presented in this work. First, the high-power applications mentioned by the industry and the innovation required in each one are presented. Next, the technical characteristics of the required semiconductors for each application and innovation are shown, generating a specific value envelope, starting with the voltage and current ratings, following with the conduction and switching characteristics, and finishing with the thermal requirements and the preferred packaging. Finally, other requirements such as driving components and knowledge generation and transfer are also addressed as requested by industry. This work is a connection between the space power industry and silicon carbide manufacturers, providing them a guide to shape the development of their next products and opening a new business case in space. By giving answer to the needs of the space power industry, this project provides ways for an early and successful adoption of the silicon carbide technology by the European space power industry, giving them an edge advantage over their competitors.

This article proposes a photovoltaic power processor for high-voltage and high-power distribution bus, between 300 V and 900 V, to be used in future space platforms like large space stations or lunar bases. Solar arrays with voltages higher than 100 V are not available for space application, being necessary to apply power conversion techniques. The idea behind this is to use series-connected zero-voltage and zero-current unregulated and isolated DC converters to achieve high bus voltage from the existing solar arrays. Bus regulation is then achieved through low-frequency hysteretic control. Topology description, semiconductor selection, design procedure, simulation and experimental validation, including tests in vacuum and partial pressures, are presented.

The next space missions require power levels that current space qualified semiconductor technology cannot provide. The silicon carbide devices are considered to overcome these challenges, and provide the required technical performance. European space industry is asked in individual meetings about their specific needs and requirements, this information is gathered, classified and presented to the silicon carbide manufacturers. This work is the connection between the two industries to better understand the requirements and applications, and build a new business case for the SiC devices in space applications.

This work presents simple layout configurations for current sensing resistor networks to measure fast and high currents in SiC devices. The proposed layout reduces the inserted inductance in the switching loop when compared to coaxial shunts, which is key for the application of SiC devices in space. High inductance in the switching loop leads to dangerous overshoots during turn-off transients, that can block the adoption of SiC devices in space due to single event burnouts. After presenting the different proposed layouts, the inserted inductance of each one is measured with an impedance analyzer as well as performing switching tests. Applying field cancellation techniques in the layout of a simple parallel resistor network, the inserted inductance is reduced up to 17.6 % when compared to a coaxial shunt, while obtaining the same current sensing performance.

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