Muhammad Imran Khan

Prof. Dr. Muhammad Imran Khan

University of Hail, Saudi Arabia
orcid

Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 January 2021 in Microsystem Technologies
Verified
Journal Article
Closed access
PDF file
RSRizwan Shoukat
Rizwan Shoukat
MKMuhammad Imran Khan
Muhammad Imran Khan

22 July 2017 in Microsystem Technologies
Verified
Journal Article
Closed access
PDF file
MKMuhammad Imran Khan
Muhammad Imran Khan
KMKoushik Mukherjee
Koushik Mukherjee
RSRizwan Shoukat
Rizwan Shoukat
HDHuang Dong
Huang Dong

28 February 2022 in Microsystem Technologies
Verified
Journal Article
Closed access
PDF file
RSRizwan Shoukat
Rizwan Shoukat
MKMuhammad Imran Khan
Muhammad Imran Khan

1 February 2018 in AEU - International Journal of Electronics and Communications
Verified
Journal Article
Closed access
DHDong Huang
Dong Huang
XYXiaofeng Yang
Xiaofeng Yang
HCHaifeng Chen
Haifeng Chen
MKMuhammad Imran Khan
Muhammad Imran Khan
FLFujiang Lin
Fujiang Lin


1 October 2014
Verified
Conference Paper
Closed access
MKMuhammad Imran Khan
Muhammad Imran Khan
ABAbdul Rehman Buzdar
Abdul Rehman Buzdar
FLFujiang Lin
Fujiang Lin
This paper discusses self-heating and reliability issues in FinFET and 3D ICs. In FinFET, self-heating and reliability issues are more serious as compared to other planar transistors. Self-heating issues in conventional planar transistors are controlled by moving the generated heat away down into the bulk of the device. However in FinFET, self-heating is a serious issue because of complex geometry and there is nowhere for the heat to go. Self-heating of FinFET causes many problems like increase in temperature of the metal wires which results in enhancing the electromigration effect. FinFET self-heating model and the design considerations to minimize the power dissipation in FinFET and 3D ICs are presented in this paper.