José Diniz

Prof. José Diniz


Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 April 2012 in Microelectronic Engineering
Verified
Journal Article
Closed access
LLL.P.B. Lima
L.P.B. Lima
José DinizJosé Diniz
José Diniz
IDI. Doi
I. Doi
JFJ. Godoy Fo
J. Godoy Fo

21 February 2014 in Journal of Applied Physics
Verified
Journal Article
Closed access
PDF file
LLL. P. B. Lima
L. P. B. Lima
HDH. F. W. Dekkers
H. F. W. Dekkers
JLJ. G. Lisoni
J. G. Lisoni
José DinizJosé Diniz
José Diniz
SES. Van Elshocht
S. Van Elshocht
SGS. De Gendt
S. De Gendt
Titanium nitride (TiN) films have been used as gate electrode on metal-oxide-semiconductor (MOS) devices. TiN effective work function (EWF) values have been often reported as suitable for pMOS. For nMOS devices, a gate electrode with sufficient low EWF value with a similar robustness as TiN is a challenge. Thus, in this work, aluminum (Al) is incorporated into the TiN layer to reduce the EWF values, which allows the use of this electrode in nMOS devices. Titanium aluminum (TiAl), Al, and aluminum nitride (AlN) layers were introduced between the high-k (HfO2) dielectric and TiN electrode as Al diffusion sources. Pt/TiN (with Al diffusion) and Pt/TiN/TiAl/TiN structures were obtained and TiN EWF values were reduced of 0.37 eV and 1.09 eV, respectively. The study of TiN/AlN/HfO2/SiO2/Si/Al structures demonstrated that AlN layer can be used as an alternative film for TiN EWF tuning. A decrease of 0.26 eV and 0.45 eV on TiN EWF values were extracted from AlN/TiN stack and AlN/TiN laminate stack, respectively. AlN/TiN laminate structures have been shown to be more effective to reduce the TiN work function than just increasing the AlN thickness.

1 May 2011 in Microelectronic Engineering
Verified
Journal Article
Closed access
MMM.A. Moreira
M.A. Moreira
IDI. Doi
I. Doi
JSJ.F. Souza
J.F. Souza
José DinizJosé Diniz
José Diniz

1 September 2004 in Materials Science and Engineering: B
Verified
Journal Article
Closed access
RTR.C. Teixeira
R.C. Teixeira
IDI. Doi
I. Doi
MZM.B.P. Zakia
M.B.P. Zakia
José DinizJosé Diniz
José Diniz
JSJ.W. Swart
J.W. Swart

1 March 2010 in Microelectronic Engineering
Verified
Journal Article
Closed access
ABA.D. Barros
A.D. Barros
KAK.F. Albertin
K.F. Albertin
JMJ. Miyoshi
J. Miyoshi
IDI. Doi
I. Doi
José DinizJosé Diniz
José Diniz

16 November 2016 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
MSMarcos Vinicius Puydinger dos Santos
Marcos Vinicius Puydinger dos Santos
MVMurilo F. Velo
Murilo F. Velo
RDRenan Daniel Domingos
Renan Daniel Domingos
YZYucheng Zhang
Yucheng Zhang
XMXavier Maeder
Xavier Maeder
IUIvo Utke
Ivo Utke