Dr. Anh Khoa Augustin Lu
Department of Materials Engineering, The University of Tokyo, Tokyo, Japan
'%3e%3cpath%20d='M22.1642%2019.0924C21.7317%2018.068%2021.1041%2017.1375%2020.3163%2016.3527C19.5309%2015.5656%2018.6006%2014.9381%2017.5766%2014.5048C17.5674%2014.5002%2017.5582%2014.4979%2017.5491%2014.4933C18.9774%2013.4616%2019.9059%2011.7811%2019.9059%209.88504C19.9059%206.74408%2017.3611%204.19922%2014.2201%204.19922C11.0792%204.19922%208.53429%206.74408%208.53429%209.88504C8.53429%2011.7811%209.46282%2013.4616%2010.8912%2014.4956C10.882%2014.5002%2010.8728%2014.5025%2010.8636%2014.5071C9.83652%2014.9404%208.91487%2015.5617%208.1239%2016.355C7.33685%2017.1404%206.70933%2018.0707%206.276%2019.0947C5.85031%2020.0972%205.62072%2021.172%205.59967%2022.2609C5.59905%2022.2853%205.60335%2022.3097%205.61229%2022.3325C5.62123%2022.3553%205.63465%2022.376%205.65174%2022.3935C5.66883%2022.4111%205.68926%2022.425%205.71182%2022.4345C5.73437%2022.444%205.7586%2022.4489%205.78308%2022.4489H7.15868C7.25956%2022.4489%207.3398%2022.3686%207.3421%2022.2701C7.38795%2020.5001%208.09868%2018.8425%209.35506%2017.5861C10.655%2016.2862%2012.3814%2015.5709%2014.2201%2015.5709C16.0588%2015.5709%2017.7852%2016.2862%2019.0852%2017.5861C20.3415%2018.8425%2021.0523%2020.5001%2021.0981%2022.2701C21.1004%2022.3709%2021.1807%2022.4489%2021.2815%2022.4489H22.6571C22.6816%2022.4489%2022.7058%2022.444%2022.7284%2022.4345C22.751%2022.425%2022.7714%2022.4111%2022.7885%2022.3935C22.8056%2022.376%2022.819%2022.3553%2022.8279%2022.3325C22.8369%2022.3097%2022.8412%2022.2853%2022.8406%2022.2609C22.8176%2021.165%2022.5907%2020.0989%2022.1642%2019.0924ZM14.2201%2013.8284C13.1678%2013.8284%2012.1773%2013.418%2011.4322%2012.6729C10.6871%2011.9278%2010.2767%2010.9374%2010.2767%209.88504C10.2767%208.83271%2010.6871%207.84227%2011.4322%207.09715C12.1773%206.35204%2013.1678%205.94165%2014.2201%205.94165C15.2724%205.94165%2016.2629%206.35204%2017.008%207.09715C17.7531%207.84227%2018.1635%208.83271%2018.1635%209.88504C18.1635%2010.9374%2017.7531%2011.9278%2017.008%2012.6729C16.2629%2013.418%2015.2724%2013.8284%2014.2201%2013.8284Z'%20fill='%238590A2'/%3e%3c/g%3e%3c/svg%3e)
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Academic Career Length
13Years (2014-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications9 January 2016 in Nano Research
Journal Article
MHMichel Houssa
Michel HoussaBBBas van Den Broek
Bas van Den Broek
KIKonstantina Iordanidou
Konstantina Iordanidou
Anh Khoa Augustin LuGPGeoffrey Pourtois
Geoffrey Pourtois
ASAndré Stesmans
André Stesmans
+2
Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.
18 July 2022 in ACS Nano
Journal Article
MOMitsuhiro Okada
Mitsuhiro OkadaJPJiang Pu
Jiang PuYLYung-Chang Lin
Yung-Chang Lin
TETakahiko Endo
Takahiko EndoNONaoya Okada
Naoya Okada
TIToshifumi Irisawa
Toshifumi Irisawa
+9
10 January 2019 in ACS Applied Nano Materials
Journal Article
MHMichel Houssa
Michel HoussaKIKonstantina Iordanidou
Konstantina IordanidouADAshish Dabral
Ashish Dabral
Anh Khoa Augustin LuGPGeoffrey Pourtois
Geoffrey Pourtois
ASAndré Stesmans
André Stesmans
+1
22 April 2019 in Applied Physics Letters
Journal Article
MHMichel Houssa
Michel HoussaKIK. Iordanidou
K. Iordanidou
ADA. Dabral
A. Dabral
Anh Khoa Augustin LuRMR. Meng
R. Meng
ASA. Stesmans
A. Stesmans +2
The contact resistance at two-dimensional graphene/MoS2 lateral heterojunctions is theoretically studied, using first-principles simulations based on density functional theory and the nonequilibrium Green's function method. The computed contact resistance lies in the range of 102 to 104 Ω μm, depending on the contact edge symmetry (armchair or zigzag) and termination (Mo and/or S terminated). This large variation in the contact resistance arises from the variation in the interface barrier height, which is sensitive to the presence of polar C-Mo bonds or sulfur dangling bonds at the interface. These results highlight that the control of the edge symmetry and/or edge termination is crucial to achieve a low contact resistance (in the range of a few hundred ohms micrometer) at graphene/MoS2 lateral heterojunctions for 2D material-based field-effect devices.
26 January 2017 in Journal of Applied Physics
Journal Article
Anh Khoa Augustin LuGPGeoffrey Pourtois
Geoffrey Pourtois
MLMathieu Luisier
Mathieu LuisierIRIuliana P. Radu
Iuliana P. RaduMHMichel Houssa
Michel HoussaIn this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel.
20 February 2017 in ACS Applied Materials & Interfaces
Journal Article
Anh Khoa Augustin LuMHMichel Houssa
Michel HoussaIRIuliana P. Radu
Iuliana P. RaduGPGeoffrey Pourtois
Geoffrey PourtoisAbout Me
Dr. Anh Khoa Augustin Lu is an Assistant Professor in the Department of Materials Engineering at The University of Tokyo, Japan. He obtained his B.S. in Civil Engineering and M.S. in Engineering Physics from the Université de Liège, Belgium, in 2010 and 2012, respectively, and his Ph.D. from KU Leuven, Belgium, in 2017. After completing his Ph.D., he worked as a Postdoctoral Researcher at the National Institute of Advanced Industrial Science and Technology (AIST) from 2017 to 2021 and then at the National Institute for Materials Science from 2021 to 2024. He joined The University of Tokyo in April 2024. Dr. Lu’s research interests are the structure-property relationships in materials. Using atomistic simulation methods such as molecular dynamics and first-principles calculations combined with machine learning, the structure and properties of new materials can be evaluated and tailored to develop new applications. The materials he currently studies are silica, metallic glasses, and two-dimensional materials.