Biodegradable stretchable electronics have demonstrated great potential for future applications in stretchable electronics and can be resorbed, dissolved, and disintegrated in the environment. Most biodegradable electronic devices have used flexible biodegradable materials, which have limited conformality in wearable and implantable devices. Here, we report a biodegradable, biocompatible, and stretchable composite microfiber of poly(glycerol sebacate) (PGS) and polyvinyl alcohol (PVA) for transient stretchable device applications. Compositing high-strength PVA with stretchable and biodegradable PGS with poor processability, formability, and mechanical strength overcomes the limits of pure PGS. As an application, the stretchable microfiber-based strain sensor developed by the incorporation of Au nanoparticles (AuNPs) into a composite microfiber showed stable current response under cyclic and dynamic stretching at 30% strain. The sensor also showed the ability to monitor the strain produced by tapping, bending, and stretching of the finger, knee, and esophagus. The biodegradable and stretchable composite materials of PGS with additive PVA have great potential for use in transient and environmentally friendly stretchable electronics with reduced environmental footprint.

Excessive emissions of carbon dioxide due to global climate warming and long-term dependency on non-renewable and insecure resources like coal and petroleum contribute to the rapid degradation of the environment. As a result, global society is moving towards increasing its energy demand in renewable and sustainable technologies. Solar energy is one of the renewable energy sources that have surfaced to be a better and environmentally neutral solution to the growing energy needs of fast developing population. COMSOL Multiphysics has been used in this study to model a 1D architecture of a ZrO2/CsSnI3/CBTS solar cell under an ideal ohmic contact condition. The main parameters of the key devices, such as ZrO2 thickness, CsSnI3 and CBTS layers, the doping concentration of the donors and acceptors, and the operation temperature are varied systematically, and their effects on the performance of the devices assessed. The simulation findings indicate that the output power, short-circuit density and overall device performance are greatly enhanced by adding more absorber layers (CsSnI3) in terms of the maximum PCE of 15.44% is obtained at an optimum absorber thickness of 710 nm. Conversely, as the layers of ZrO2 and CBTS are made thicker, these performance parameters are compromised. The given type of simulation study can give very useful information about the material properties and the optimization of the device parameters to be used in the experimental implementation and underline the potential of CsSnI3-based material of absorbers in the next generation of photovoltaic technologies.

Optoelectronic synaptic transistors integrate optical sensing with history‐dependent conductance modulation for neuromorphic information processing. Here, ultraviolet‐responsive synaptic transistors were fabricated using indium‐free amorphous Ga‐Zn‐Sn‐O (a‐GZTO) films deposited from targets with nominal Ga contents of 0.5, 1, and 2 wt.%. The devices exhibited graded composition‐dependent electrical, photoresponsive, and synaptic characteristics, with 1 GZTO generally showing intermediate behavior. O 1s peak fitting indicated that the defect‐related component decreased with increasing Ga content, consistent with the observed photoresponse and retention trends. Under 365 nm stimulation, the devices demonstrated excitatory postsynaptic current, paired‐pulse facilitation, and spike‐number‐, duration‐, and rate‐dependent plasticity. Peak‐normalized transients showed greater retention at lower Ga contents. Electrical and single‐pulse optical characteristics were evaluated across five devices per composition to assess device‐to‐device variation. For 10 UV pulses of the same width and intensity, increasing the repetition frequency enhanced the relative EPSC gain, consistent with high‐pass‐filter‐like temporal processing at the device level. These findings establish nominal Ga content as a materials‐design parameter for tuning UV response, retention, and relaxation in planar a‐GZTO transistors.