In this study, a hybrid organic–inorganic perovskite solar cell (PSC) based on methylammonium germanium triiodide (MAGeI₃), which is composed of methylammonium ($\mathrm{C}{\mathrm{H}}_3\mathrm{N}{\mathrm{H}}_3^{+})$ cations and germanium triiodide ($\mathrm{G}\mathrm{e}{\mathrm{I}}_3^{-}$) anions, has been numerically studied using SCAPS-1d codes. An extensive investigation of various electron transport layers (ETLs) and hole transport layers (HTLs) was conducted to identify the most optimal device configuration. The FTO/ZnOS/MAGeI₃/PEDOT-WO₃ structure performed the highest efficiency of all combinations tested, with an impressive optimized efficiency of 15.84%. This configuration exhibited a V_oc of 1.38 V, J_sc of 13.79 mA/cm², and FF of 82.58%. J-V characteristics and external quantum efficiency (EQE) measurements indicate that this device offers superior performance, as it has reduced current leakage, improved electron and hole extraction characteristics, and reduced trap-assisted interfacial recombination. Optimum device performance was achieved at active layer thickness of 560 nm. These findings may also serve as a basis for developing lightweight and ultra-thin solar cells, in addition to improving overall efficiency. Furthermore, a comprehensive correlation study was conducted to evaluate the optimum thickness and doping level for both ZnOS-ETL and PEDOT-WO₃-HTL. The photovoltaic performance parameters of the FTO/ZnOS/MAGeI₃/PEDOT-WO₃ structure were analyzed over a wide temperature range (275 K to 450 K). The structure exhibited stable performance at elevated operating temperatures up to 385 K, with only minimal degradation in PCE of approximately 0.42%. Our study underscores the promise of utilizing cost-effective and long-term stability materials like ZnOS and PEDOT-WO₃ alongside the toxic-free MAGeI₃ perovskite. This combination exhibits significant potential for eco-friendly PSC, paving the way for the development of highly efficient ultra-thin PSC.

In this study, a novel perovskite solar cell (PSC) architecture is presented that utilizes an HTL-free configuration with formamide tin iodide (FASnI₃) as the active layer and fullerene (C60) as the electron transport layer (ETL), which represents a pioneering approach within the field. The elimination of hole transport layers (HTLs) reduces complexity and cost in PSC heterojunction structures, resulting in a simplified and more cost-effective PSC structure. In this context, an HTL-free tin HC(NH₂)₂SnI₃-based PSC was simulated using the solar cell capacitance simulator (SCAPS) within a one-dimensional framework. Through this approach, the device performance of this novel HTL-free FASnI₃-based PSC structure was engineered and evaluated. Key performance parameters, including the open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor (FF), power conversion efficiency (PCE), I-V characteristics, and quantum efficiency (QE), were systematically assessed through the modulation of physical parameters across various layers of the device. A preliminary analysis indicated that the HTL-free configuration exhibited improved I-V characteristics, with a PCE increase of 1.93% over the HTL configuration due to improved electron and hole extraction characteristics, reduced current leakage at the back contact, and reduced trap-induced interfacial recombination. An additional boost to the device’s key performance parameters has been achieved through the further optimization of several physical parameters, such as active layer thickness, bulk and interface defects, ETL thickness, carrier concentration, and back-contact materials. For instance, increasing the thickness of the active layer PSC up to 1500 nm revealed enhanced PV performance parameters; however, further increases in thickness have resulted in performance saturation due to an increased rate of hole–electron recombination. Moreover, a comprehensive correlation study has been conducted to determine the optimum thickness and donor doping level for the C60-ETL layer in the range of 10–200 nm and 10¹²–10¹⁹ cm⁻³, respectively. Optimum device performance was observed at an ETL-C60 ultra-thin thickness of 10 nm and a carrier concentration of 10¹⁹ cm⁻³. To maintain improved PCEs, bulk and interface defects must be less than 10¹⁶ cm⁻³ and 10¹⁵ cm⁻³, respectively. Additional device performance improvement was achieved with a back-contact work function of 5 eV. The optimized HTL-free FASnI₃ structure demonstrated exceptional photovoltaic performance with a PCE of 19.63%, V_oc of 0.87 V, J_sc of 27.86 mA/cm², and FF of 81%. These findings highlight the potential for highly efficient photovoltaic (PV) technology solutions based on lead-free perovskite solar cell (PSC) structures that contribute to environmental remediation and cost-effectiveness.

This research focuses on creating CuO/PANI nanocomposite films by electrodepositing copper oxide nanoparticles into a polyaniline matrix on ITO substrates. The CuO nanoparticle content was adjusted between 7% and 21%. These nanocomposites are promising for various applications, such as optoelectronic devices, gas sensors, electromagnetic interference shielding, and electrochromic devices. We utilized UV-Vis spectroscopy to examine the nanocomposites’ interaction with light, allowing us to ascertain their refractive indices and absorption coefficients. The Scherrer formula facilitated the determination of the average crystallite size, shedding light on the material’s internal structure. Tauc plots indicated a reduction in the energy-band gap from 3.36 eV to 3.12 eV as the concentration of CuO nanoparticles within the PANI matrix increased, accompanied by a rise in electrical conductivity. The incorporation of CuO nanoparticles into the polyaniline matrix appears to enhance the conjugation length of PANI chains, as evidenced by shifts in the quinoid and benzenoid ring vibrations in FTIR spectra. SEM analysis indicates that the nanocomposite films possess a relatively smooth and homogeneous surface. Additionally, FTIR and XRD analyses demonstrate an increasing degree of interaction between CuO nanoparticles and PANI chains with higher CuO concentrations. At lower concentrations, interactions were minimal. In contrast, at higher concentrations, more significant interactions were observed, which facilitated the stretching of polymer chains, improved molecular packing, and facilitated the formation of larger crystalline structures within the PANI matrix. The incorporation of CuO nanoparticles resulted in nanocomposites with electrical conductivities ranging from 1.2 to 17.0 S cm⁻¹, which are favorable for optimum performance in optoelectronic devices. These results confirm that the nanocomposite films combine pronounced crystallinity, markedly enhanced electrical conductivity, and tunable band-gap energies, positioning them as versatile candidates for next-generation optoelectronic devices.