The inverse spinel ferrimagnetic NiCo2O4 possesses high magnetic Curie temperature TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo2O4 thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo2O4 films on MgAl2O4 substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while TC for 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity (σxy) and its scaling relation with the longitudinal conductivity (σxx) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo2O4.

We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (T_C) of PbZr_0.2Ti_0.8O₃ (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La_0.67Sr_0.33MnO₃ (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS₂ base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS₂ channel at room temperature, with an on/off ratio of up to 2 × 10⁵ and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field E_c for the PZT membranes varies from 0.75 to 3.0 MV cm^-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller E_c, with the samples transferred on LSMO showing symmetric E_c of about -0.26/+0.28 MV cm^-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS₂ exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS₂ show T_C of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.

The piezoelectric ceramic Pb_0.98Sr_0.02(Mn_1/3Sb_2/3)_0.05Zr_0.48Ti_0.47O₃+0.25 wt%CeO₂ modified with BiFeO₃ was synthesized by conventional ceramics technology and the high field dielectric property was investigated. The XRD patterns show that BiFeO₃ can be commendably dissolved into the PMS-PZT solid solution. Bi³⁺ replacement for A-site Pb²⁺ and Fe³⁺ replacement for B-site Ti⁴⁺ or Zr⁴⁺ cause BiFeO₃ to act as “soft” and “hard” dopant. Therefore, an appropriate amount of BiFeO₃ enhances the piezoelectric properties and high field dielectric properties simultaneously. The ceramic modified with 0.2 mol% BiFeO₃ exhibited the following optimal properties: d₃₃ = 359pC/N, k_p = 0.622, Q_m = 1519, ϵ_r = 1760, tanδ = 0.46% (1 kHz, 1V/mm), and tanδ = 3.26% (1 kHz, 500V/mm).