In this study, ultrafine nickel oxide nanoparticles (NiO NPs) were well synthesized using a simple wet chemical method under low temperature, 300 °C. An Ni(OH)₂ precursor was well precipitated by dropping NH₄OH into an Ni(Ac)₂ solution. TG-DTA showed that the weight of the precipitate decreases until 300 °C; therefore, the precursor was heat-treated at 300 °C. X-ray diffraction (XRD) patterns indicated that hexagonal-structured NiO NPs with (200) preferred orientation was synthesized. In addition, BET specific surface area (SSA) and HRTEM analyses revealed that spherical NiO NPs were formed with SSA and particle size of 60.14 m²/g and ca. 5–15 nm by using the low temperature method. FT-IR spectra of the NiO NPs showed only a sharp vibrating absorption peak at around 550 cm⁻¹ owing to the Ni-O bond. Additionally, in UV-vis absorption spectra, the wavelength for absorption edge and energy band gap of the ultrafine NiO NPs was 290 nm and 3.44 eV.

In this study, indium-tin-oxide (ITO) nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD) panel scraps by means of lift-off method. This can be done by dissolving color filter (CF) layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222) preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate.

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

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