Xiaowen Yan received the B.S. degree in microelectronics science and engineering from Anhui University, China, in 2019. She is currently working toward the M.S. degree in integrated circuit engineering at the National ASIC System Engineering Research Center, Southeast University, Nanjing, China. Her research interests include the design and reliability of wide bandgap semiconductor devices.
Xiaowen Yan received the B.S. degree in microelectronics science and engineering from Anhui University, China, in 2019. She is currently working toward the M.S. degree in integrated circuit engineering at the National ASIC System Engineering Research Center, Southeast University, Nanjing, China. Her research interests include the design and reliability of wide bandgap semiconductor devices.