Chalcogenide-based ultrathin all-dielectric metamaterials with multifunctional polarized/unpolarized wide/narrow-band perfect mid-infrared absorption spectrally tunable with the azimuthal angle of incidence.

We use dip-pen nanolithography to accurately pattern Ni(OH)₂ nanoclusters on a metachemical surface with an exceptionally large surface area. The distance between the nanoclusters can be manipulated to control the oxygen-evolution reaction current and overpotential, thereby improving the efficiency of the water-splitting process while using minute amounts of the catalyst.

We propose a novel concept of designing silicon photonics metamaterials for perfect near-infrared light absorption. The study’s emphasis is an in-depth investigation of various physical mechanisms behind the ∼ 100 % ultra-narrowband record peak absorptance of the designed structures, comprising an ultrathin silicon absorber. The electromagnetic power transport, described by the Poynting vector, is innovatively explored, which shows combined vortex and crossed-junction two-dimensional waveguide-like flows as outcomes of optical field singularities. These flows, though peculiar for each of the designed structures, turn out to be key factors of the perfect resonant optical absorption. The electromagnetic fields show tight two-dimensional confinement: a sharp vertical confinement of the resonant-cavity type combined with a lateral metasurface supported confinement. The silicon-absorbing layer and its oxide environment are confined between two subwavelength metasurfaces such that the entire design is well compatible with silicon-on-insulator microelectronics. The design concept and its outcomes meet the extensive challenges of ultrathin absorbers for minimum noise and an ultra-narrowband absorptance spectrum, while maintaining an overall very thin structure for planar integration. With these materials and such objectives, the proposed designs seem essential, as standard approaches fail, mainly due to a very low silicon absorption coefficient over the near-infrared range. Tolerance tests for fabrication errors show fair tolerability while maintaining a high absorptance peak, along with a controllable deviation off the central-design wavelength. Various applications are suggested and analyzed, which include but are not limited to: efficient photodetectors for focal plane array and on-chip integrated silicon photonics, high-precision spectroscopic chemical and angular-position sensing, and wavelength-division multiplexing.

A new dielectric Fabry–Perot cavity is considered for enhanced optical absorption in a thin semiconductor layer embedded within the resonant cavity. In this design, the front (furthest from the illuminated side) mirror is a grating structure with nearly perfect retroreflection. Proof of concept, including semianalytical calculation, and computer-aided design and simulation is performed for application in a midinfrared wavelength band based on a HgCdTe absorbing layer. The results indicate that this new type of cavity meets the combined challenges of significantly increasing the absorption efficiency and reducing the overall complexity and size of the entire device, in comparison to a conventional resonant cavity, in which both mirrors are formed from quarter-wavelength multilayer stacks.