Cr2O3 thin films were grown on a Si (1 0 0) substrate using Cr(thd)3 and O3 by atomic layer deposition (ALD) at substrate temperatures (TG) from 200 to 300 °C. X-ray amorphous films were deposited at a TG ≤ 225 °C, whereas at higher temperatures (TG ≥ 250 °C), the eskolaite phase was observed in the films. The growth rate of the films increased from 0.003 to 0.01 nm/cycle by increasing TG from 200 to 275 °C. The relatively low growth rate of Cr(thd)3—O3 makes it appropriate for the ALD of precisely controllable solid solution-type ternary-component thin films. The Ti-doped Cr2O3 film showed higher hardness (16.7 GPa) compared with that of the undoped film (12.8 GPa) with similar thickness. The band gap values of the pure Cr2O3 corresponding to the indirect transition model showed no dependence on TG; however, doping the Cr2O3 with Ti decreased its band gap energy value from 3.1 to 2.2 eV.
Interferenceless coded aperture correlation holography (I-COACH) is a robust imaging technique for recovering three-dimensional object information using incoherent holography without two-beam interference. In this study, five-dimensional (5D) imaging along 3D space, spectrum and polarization in I-COACH is proposed and experimentally demonstrated for the first time. The proposed technique exploits the polarization-dependent light modulation characteristics of spatial light modulators to record polarization-dependent intensity distributions, which are distinguished by significant blurring between orthogonal polarization states. 5D I-COACH is implemented by inter-connecting all five dimensions in a single frame, and image recovery is attempted from different configurations of recorded point spread intensity distributions and response-to-object intensity distributions along 5D using recently developed deconvolution techniques. The simulation and experimental results confirm the 5D imaging capabilities of I-COACH. The proposed technique can be a useful tool for birefringence microscopy, and functional and structural imaging applications.
Axial resolution is one of the most important characteristics of a microscope. In all microscopes, a high axial resolution is desired in order to discriminate information efficiently along the longitudinal direction. However, when studying thick samples that do not contain laterally overlapping information, a low axial resolution is desirable, as information from multiple planes can be recorded simultaneously from a single camera shot instead of plane-by-plane mechanical refocusing. In this study, we increased the focal depth of an infrared microscope non-invasively by introducing a binary axicon fabricated on a barium fluoride substrate close to the sample. Preliminary results of imaging the thick and sparse silk fibers showed an improved focal depth with a slight decrease in lateral resolution and an increase in background noise.
28 September 2019 in Journal of Electrical Engineering
Atomic layer deposited polycrystalline Cr2O3 films grown from chromyl chloride and methanol were analysed using spectrophotometry, spectral ellipsometry and atomic force microscopy. The films possessed polycrystalline eskolaite structure with rough sublayer in contact with air. Using the positions and peak widths of the two visible absorption bands as fixed from absorption measurements, we could determine the optical dispersion of the film material in 1.3 – 6 eV energy region. A direct band gap of chromia film grown in these conditions was 3.2 eV, the other also direct absorption band with a gap of 5.15 eV was found situated in UV.
HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.