Amir I. Gumarov

Dr. Amir I. Gumarov

Kazan Federal University, Institute of Physics, 18 Kremljovskaja str., Kazan 420008, Russia.
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Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 January 2019 in Thin Solid Films
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Journal Article
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AEA. Esmaeili
A. Esmaeili
IYIgor Yanilkin
Igor Yanilkin
Amir I. GumarovAmir I. Gumarov
Amir I. Gumarov
IVIskander R. Vakhitov
Iskander R. Vakhitov
BGBulat Gabbasov
Bulat Gabbasov
LTLenar Tagirov
Lenar Tagirov

2 July 2020 in Communications Materials
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Journal Article
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VSVasliy Stolyarov
Vasliy Stolyarov
Dmitry YakovlevDmitry Yakovlev
Dmitry Yakovlev
SKSergei N. Kozlov
Sergei N. Kozlov
OSOlga V. Skryabina
Olga V. Skryabina
DLDmitry S. Lvov
Dmitry S. Lvov
DRDimitri Roditchev
Dimitri Roditchev
Superconducting proximity devices using low-dimensional semiconducting elements enable a ballistic regime in the proximity transport. The use of topological insulators in such devices is considered promising owing to the peculiar transport properties these materials offer, as well the hope of inducing topological superconductivity and Majorana phenomena via proximity effects. Here we demonstrate the fabrication and superconducting properties of proximity Josephson devices integrating nanocrystals single of Bi2Te2.3Se0.7 with a thickness of a few unit cells. Single junctions display typical characteristics of planar Josephson devices; junctions integrating two nanocrystals behave as nanodimensional superconducting quantum interference devices. A peculiar temperature and magnetic field evolution of the Josephson current along with the observed excess current effect point towards the ballistic proximity regime of topological channels. This suggests the proposed devices are promising for testing topological superconducting phenomena in two-dimensions.

15 May 2020 in Beilstein Journal of Nanotechnology
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Wael MohammedWael Mohammed
Wael Mohammed
IYIgor Yanilkin
Igor Yanilkin
Amir I. GumarovAmir I. Gumarov
Amir I. Gumarov
AKAirat Kiiamov
Airat Kiiamov
RYRoman Yusupov
Roman Yusupov
LTLenar Tagirov
Lenar Tagirov
Single-layer vanadium nitride (VN) and bilayer Pd0.96Fe0.04/VN and VN/Pd0.92Fe0.08 thin-film heterostructures for possible spintronics applications were synthesized on (001)-oriented single-crystalline magnesium oxide (MgO) substrates utilizing a four-chamber ultrahigh vacuum deposition and analysis system. The VN layers were reactively magnetron sputtered from a metallic vanadium target in Ar/N2 plasma, while the Pd1−xFex layers were deposited by co-evaporation of metallic Pd and Fe pellets from calibrated effusion cells in a molecular beam epitaxy chamber. The VN stoichiometry and Pd1−xFex composition were controlled by X-ray photoelectron spectroscopy. In situ low-energy electron diffraction and ex situ X-ray diffraction show that the 30 nm thick single-layer VN as well as the double-layer VN(30 nm)/Pd0.92Fe0.08(12 nm) and Pd0.96Fe0.04(20 nm)/VN(30 nm) structures have grown cube-on-cube epitaxially. Electric resistance measurements demonstrate a metallic-type temperature dependence for the VN film with a small residual resistivity of 9 μΩ·cm at 10 K, indicating high purity and structural quality of the film. The transition to the superconducting state was observed at 7.7 K for the VN film, at 7.2 K for the Pd0.96Fe0.04/VN structure and at 6.1 K for the VN/Pd0.92Fe0.08 structure with the critical temperature decreasing due to the proximity effect. Contrary to expectations, all transitions were very sharp with the width ranging from 25 mK for the VN film to 50 mK for the VN/Pd0.92Fe0.08 structure. We propose epitaxial single-crystalline thin films of VN and heteroepitaxial Pd1−xFex/VN and VN/Pd1−xFex (x ≤ 0.08) structures grown on MgO(001) as the materials of a choice for the improvement of superconducting magnetic random access memory characteristics.

1 June 2019 in International Journal of Hydrogen Energy
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Journal Article
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LBL.B. Begrambekov
L.B. Begrambekov
AEA.E. Evsin
A.E. Evsin
AGA.V. Grunin
A.V. Grunin
Amir I. GumarovAmir I. Gumarov
Amir I. Gumarov
AKA.S. Kaplevsky
A.S. Kaplevsky
LTLenar Tagirov
Lenar Tagirov

29 December 2020 in Nanomaterials
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Journal Article
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IYIgor Yanilkin
Igor Yanilkin
Wael MohammedWael Mohammed
Wael Mohammed
Amir I. GumarovAmir I. Gumarov
Amir I. Gumarov
AKAirat Kiiamov
Airat Kiiamov
RYRoman Yusupov
Roman Yusupov
LTLenar Tagirov
Lenar Tagirov
A thin-film superconductor(S)/ferromagnet(F) F1/S/F2-type Pd0.96Fe0.04(20 nm)/VN(30 nm)/Pd0.92Fe0.08(12 nm) heteroepitaxial structure was synthesized on (001)-oriented single-crystal MgO substrate utilizing a combination of the reactive magnetron sputtering and the molecular-beam epitaxy techniques in ultrahigh vacuum conditions. The reference VN film, Pd0.96Fe0.04/VN, and VN/Pd0.92Fe0.08 bilayers were grown in one run with the target sample. In-situ low-energy electron diffraction and ex-situ X-ray diffraction investigations approved that all the Pd1−xFex and VN layers in the series grew epitaxial in a cube-on-cube mode. Electric resistance measurements demonstrated sharp transitions to the superconducting state with the critical temperature reducing gradually from 7.7 to 5.4 K in the sequence of the VN film, Pd0.96Fe0.04/VN, VN/Pd0.92Fe0.08, and Pd0.96Fe0.04/VN/Pd0.92Fe0.08 heterostructures due to the superconductor/ferromagnet proximity effect. Transition width increased in the same sequence from 21 to 40 mK. Magnetoresistance studies of the trilayer Pd0.96Fe0.04/VN/Pd0.92Fe0.08 sample revealed a superconducting spin-valve effect upon switching between the parallel and antiparallel magnetic configurations, and anomalies associated with the magnetic moment reversals of the ferromagnetic Pd0.92Fe0.08 and Pd0.96Fe0.04 alloy layers. The moderate critical temperature suppression and manifestations of superconducting spin-valve properties make this kind of material promising for superconducting spintronics applications.

15 September 2017 in Applied Magnetic Resonance
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Journal Article
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AEA. Esmaeili
A. Esmaeili
IVIskander R. Vakhitov
Iskander R. Vakhitov
IYIgor Yanilkin
Igor Yanilkin
Amir I. GumarovAmir I. Gumarov
Amir I. Gumarov
BKB. M. Khaliulin
B. M. Khaliulin
LTLenar Tagirov
Lenar Tagirov