Hao Jin

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-FETs) with current density of −5.6 mA/mm and ${I} _{{\mathrm {ON}}}/{I} _{{\mathrm {OFF}}}$ ratio of 10 ⁶ was demonstrated on a p-GaN/AlN/AlGaN/GaN heterostructure on Si substrate. A decent ohmic contact resistivity of $9.25 \times 10^{-5} \Omega \cdot {\mathrm {cm}}^{2}$ is achieved by capping the heterostructure with a 10-nm heavily Mg-doped p ⁺⁺ -GaN epilayer. A two-step gate trench etching process, is implemented to overcome the decreased OFF-state blocking voltage associated with the surface p ⁺⁺ -GaN layer. The proposed structure is compelling for monolithic integration of GaN-based logic and power devices.

9 August 2022

Book Chapter

Discrimination of Adulterated Milk Using Temperature-Dependent Two-Dimensional Near-Infrared Correlation Spectroscopy

Ming Y. Huang

Jia Long

Ren J. Yang

Hai Y. Wu

Hao Jin

Renjie Yang

Hao Jin

Hao Jin

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