The rapid development of information technology has led to urgent requirements for high efficiency and ultralow power consumption. In the past few decades, neuromorphic computing has drawn extensive attention due to its promising capability in processing massive data with extremely low power consumption. Here, we offer a comprehensive review on emerging artificial neuromorphic devices and their applications. In light of the inner physical processes, we classify the devices into nine major categories and discuss their respective strengths and weaknesses. We will show that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry. Meanwhile, the recently developed electrolyte-gated synaptic transistors have demonstrated outstanding energy efficiency, linearity, and symmetry, but their stability and scalability still need to be optimized. Other emerging synaptic structures, such as ferroelectric, metal–insulator transition based, photonic, and purely electronic devices also have limitations in some aspects, therefore leading to the need for further developing high-performance synaptic devices. Additional efforts are also demanded to enhance the functionality of artificial neurons while maintaining a relatively low cost in area and power, and it will be of significance to explore the intrinsic neuronal stochasticity in computing and optimize their driving capability, etc. Finally, by looking into the correlations between the operation mechanisms, material systems, device structures, and performance, we provide clues to future material selections, device designs, and integrations for artificial synapses and neurons.

As a key building block of biological cortex, neurons are powerful information processing units and can achieve highly complex nonlinear computations even in individual cells. Hardware implementation of artificial neurons with similar capability is of great significance for the construction of intelligent, neuromorphic systems. Here, we demonstrate an artificial neuron based on NbO_x volatile memristor that not only realizes traditional all-or-nothing, threshold-driven spiking and spatiotemporal integration, but also enables dynamic logic including XOR function that is not linearly separable and multiplicative gain modulation among different dendritic inputs, therefore surpassing neuronal functions described by a simple point neuron model. A monolithically integrated 4 × 4 fully memristive neural network consisting of volatile NbO_x memristor based neurons and nonvolatile TaO_x memristor based synapses in a single crossbar array is experimentally demonstrated, showing capability in pattern recognition through online learning using a simplified δ-rule and coincidence detection, which paves the way for bio-inspired intelligent systems.

Brain-inspired neuromorphic computing is expected to revolutionize the architecture of conventional digital computers and lead to a new generation of powerful computing paradigms, where memristors with analog resistive switching are considered to be potential solutions for synapses. Here we propose and demonstrate a novel approach to engineering the analog switching linearity in TaO_x based memristors, that is, by homogenizing the filament growth/dissolution rate via the introduction of an ion diffusion limiting layer (DLL) at the TiN/TaO_x interface. This has effectively mitigated the commonly observed two-regime conductance modulation behavior and led to more uniform filament growth (dissolution) dynamics with time, therefore significantly improving the conductance modulation linearity that is desirable in neuromorphic systems. In addition, the introduction of the DLL also served to reduce the power consumption of the memristor, and important synaptic learning rules in biological brains such as spike timing dependent plasticity were successfully implemented using these optimized devices. This study could provide general implications for continued optimizations of memristor performance for neuromorphic applications, by carefully tuning the dynamics involved in filament growth and dissolution.

Neuromorphic perception systems inspired by biology have tremendous potential in efficiently processing multi-sensory signals from the physical world, but a highly efficient hardware element capable of sensing and encoding multiple physical signals is still lacking. Here, we report a spike-based neuromorphic perception system consisting of calibratable artificial sensory neurons based on epitaxial VO₂, where the high crystalline quality of VO₂ leads to significantly improved cycle-to-cycle uniformity. A calibration resistor is introduced to optimize device-to-device consistency, and to adapt the VO₂ neuron to different sensors with varied resistance level, a scaling resistor is further incorporated, demonstrating cross-sensory neuromorphic perception component that can encode illuminance, temperature, pressure and curvature signals into spikes. These components are utilized to monitor the curvatures of fingers, thereby achieving hand gesture classification. This study addresses the fundamental cycle-to-cycle and device-to-device variation issues of sensory neurons, therefore promoting the construction of neuromorphic perception systems for e-skin and neurorobotics.