This paper presents a wide-input-range rectifier design with a diode-feeding (DF) architecture and load modulation. Dynamically-biased diodes are connected to the gates of the rectifying transistors to create bias voltage differences for PMOS and NMOS devices and the isolation of the reverse currents at different input power levels. Also, the switch-capacitor-based load modulation scheme is proposed to achieve optimal efficiency over wide-range load current deviations automatically. The proposed four-stage rectifier design was fabricated using 65nm CMOS technology and occupies a silicon area of 0.92 x 0.27mm2. The measured sensitivity of the rectifier is -15dBm at 1M $\Omega$ load, and the peak power conversion efficiency is 28% at a load of $22\mathrm{k}\Omega$ . With the load modulation scheme, the conversion efficiency is enhanced by $> 10\%$ in a load current from $7\mu\mathrm{A}$ to $35\mu\mathrm{A}$ , when compared to a design without the load modulation scheme.

The BaTiO₃ ceramics applications based on electronic properties have very high gradient scientific and industrial-technological interests. Our scientific research has been based on nano BaTiO₃ modified with Yttrium based organometallic salt (MOD-Y). The samples have been consolidated at a sintering temperature of 1350 °C. Within the study, the new frontiers for different electronic properties between the layers of BaTiO₃ grains have been introduced. The research target was grain boundary investigations and the influence on dielectric properties. After scanning electron microscopy and dielectric measurements, it has been established that modified BaTiO₃ samples with larger grains showed a better compact state that led to a higher dielectric constant value. DC bias stability was also investigated and showed a connection between the grain size and capacitance stability. Analyses of functions that could approximate experimental curves were successfully employed. Practical application of fractal corrections was performed, based on surface (α_s) and pore size (α_p) corrections, which resulted in obtainment of the relation between the capacitance and Curie temperature. Successful introduction of fractal corrections for capacitance-Curie temperature dependence for a set of experimental data is an important step towards further miniaturization of intergranular capacitors.