Sergey Kubatkin

Sergey Kubatkin

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Sergey Kubatkin

Chalmers University of Technology

Research Focus & Metrics

Academic Career Length

33Years (1994-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 October 2003 in Nature
Verified
Journal Article
Closed access
SKSergey Kubatkin
Sergey Kubatkin
ADAndrey Danilov
Andrey Danilov
MHMattias Hjort
Mattias Hjort
JCJérôme Cornil
Jérôme Cornil
JBJean-Luc Brédas
Jean-Luc Brédas
TBThomas Bjørnholm
Thomas Bjørnholm

17 January 2010 in Nature Nanotechnology
Verified
Journal Article
Closed access
ATAlexander Tzalenchuk
Alexander Tzalenchuk
SLSamuel Lara-Avila
Samuel Lara-Avila
AKAlexei Kalaboukhov
Alexei Kalaboukhov
SPSara Paolillo
Sara Paolillo
MSMikael Syväjärvi
Mikael Syväjärvi
SKSergey Kubatkin
Sergey Kubatkin

23 November 2010 in Physical Review Letters
Verified
Journal Article
Closed access
JKJ. Karch
J. Karch
POP. Olbrich
P. Olbrich
MSM. Schmalzbauer
M. Schmalzbauer
CZC. Zoth
C. Zoth
CBC. Brinsteiner
C. Brinsteiner
SGS. D. Ganichev
S. D. Ganichev
We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates\char22{}under oblique incidence\char22{}an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed E and B fields which are, however rotating with the light's frequency.

18 December 2020 in Science Advances
Verified
Journal Article
Open access
PDF file
SGS. E. de Graaf
S. E. de Graaf
LFL. Faoro
L. Faoro
LIL. B. Ioffe
L. B. Ioffe
SMS. Mahashabde
S. Mahashabde
JBJ. J. Burnett
J. J. Burnett
ATA. Ya. Tzalenchuk
A. Ya. Tzalenchuk
Spurious two-level systems observed in quantum devices are attributed to long-lived quasiparticles trapped in gap inhomogeneities.

13 September 2010 in Applied Physics Letters
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Journal Article
Closed access
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SKSergey Kopylov
Sergey Kopylov
ATAlexander Tzalenchuk
Alexander Tzalenchuk
SKSergey Kubatkin
Sergey Kubatkin
VFVladimir I. Fal’kO
Vladimir I. Fal’kO
We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.

7 January 2011 in Advanced Materials
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Journal Article
Closed access
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SLSamuel Lara‐Avila
Samuel Lara‐Avila
KMKasper Moth‐Poulsen
Kasper Moth‐Poulsen
RYRositza Yakimova
Rositza Yakimova
TBThomas Bjørnholm
Thomas Bjørnholm
VFVladimir Fal’kO
Vladimir Fal’kO
SKSergey Kubatkin
Sergey Kubatkin