An intrinsic magnetic tunnel junction: An electrical current running through two stacked magnetic layers is larger if their magnetizations point in the same direction than if they point in opposite directions. These so-called magnetic tunnel junctions, used in electronics, must be carefully engineered. Two groups now show that high magnetoresistance intrinsically occurs in samples of the layered material CrI ₃ sandwiched between graphite contacts. By varying the number of layers in the samples, Klein et al. and Song et al. found that the electrical current running perpendicular to the layers was largest in high magnetic fields and smallest near zero field. This observation is consistent with adjacent layers naturally having opposite magnetizations, which align parallel to each other in high magnetic fields. Science , this issue p. 1218 , p. 1214

We propose a new mechanism for the thermal Hall effect in exchange spin-wave systems, which is induced by the magnon-phonon interaction. Using symmetry arguments, we first show that this effect is quite general, and exists whenever the mirror symmetry in the direction of the magnetization is broken. We then demonstrate our result in a collinear ferromagnet on a square lattice, with perpendicular easy-axis anisotropy and Dzyaloshinskii-Moriya interaction from mirror symmetry breaking. We show that the thermal Hall conductivity is controlled by the resonant contribution from the anticrossing points between the magnon and phonon branches, and estimate its size to be comparable to that of the magnon-mediated thermal Hall effect.

We show that the exciton optical selection rule in gapped chiral fermion systems is governed by their winding number $w$, a topological quantity of the Bloch bands. Specifically, in a $C_N$-invariant chiral fermion system, the angular momentum of bright exciton states is given by $w\pm 1+nN$ with $n$ being an integer. We demonstrate our theory by proposing two chiral fermion systems capable of hosting dark $s$-like excitons: gapped surface states of a topological crystalline insulator with $C_4$ rotational symmetry and biased $3R$-stacked ${\mathrm{MoS}}_2$ bilayers. In the latter case, we show that gating can be used to tune the $s$-like excitons from bright to dark by changing the winding number. Our theory thus provides a pathway to electrical control of optical transitions in two-dimensional material.